. . "15"^^ . . "15"^^ . "Projekt je zam\u011B\u0159en na v\u00FDvoj, realizaci a optimalizaci technologie r\u016Fstu tenk\u00FDch vrstev z\u0159ed\u011Bn\u00FDch magnetick\u00FDch polovodi\u010D\u016F (DMS), konkr\u00E9tn\u011B manganem dotovan\u00E9ho GaAs. Magnetick\u00FD materi\u00E1l bude p\u0159ipravov\u00E1n v nov\u00E9, dedikovan\u00E9 aparatu\u0159e molekul\u00E1rn\u00ED svazkov\u00E9 epitaxe, zaru\u010Duj\u00EDc\u00ED nejlep\u0161\u00ED mo\u017Enou \u010Distotu a reprodukovatelnost r\u016Fstu. Vyroben\u00E9 vzorky budou studov\u00E1ny transportn\u00ED, optickou a magnetometrickou diagnostikou, p\u0159i\u010Dem\u017E z\u00EDskan\u00E9 parametry budou vyu\u017Eity jak p\u0159i optimalizaci r\u016Fstov\u00E9ho procesu, tak p\u0159i por\u016Fstov\u00E9m zpracov\u00E1n\u00ED materi\u00E1lu. Z\u00EDskan\u00FD materi\u00E1l a vyvinut\u00E1 technologie budou slou\u017Eit jako v\u00FDchodisko dal\u0161\u00EDho experiment\u00E1ln\u00EDho v\u00FDzkumu ve fyzice magnetick\u00FDch polovodi\u010D\u016F, dopl\u0148uj\u00EDc\u00EDho existuj\u00EDc\u00ED v\u00FDznamn\u00FD v\u00FDzkum teoretick\u00FD." . . "N\u00EDzkoteplotn\u00ED molekul\u00E1rn\u00ED svazkov\u00E1 epitaxe feromagnetick\u00E9ho (Ga,Mn)As" . "The project is aimed at development, realization and optimization of technology for growth of thin films of diluted magnetic semiconductors, in particular Mn-doped GaAs. The magnetic material will be produced in a new, dedicated MBE-facility, ensuring the best possible material purity and growth reproducibility. Prepared samples will be studied by means of transport, optical and magnetometric diagnostics. Resulting parameters will be used both for growth optimization, and for post-processing of the samples. The material obtained as well as the newly developed technology will be used as a base for further experimental research in physics of magnetic semiconductors, complementing the running theoretical research."@en . . "0"^^ . . . . . . . . "1"^^ . "Neuvedeno."@en . "http://www.isvav.cz/projectDetail.do?rowId=GA202/04/1519"^^ . "Na \u00FArovni \u00FAzk\u00E9 sv\u011Btov\u00E9 \u0161pi\u010Dky byla zvl\u00E1dnuta technologie p\u0159\u00EDpravy feromagnetick\u00E9ho polovodi\u010De (Ga,Mn)As. Vlastn\u00EDm technologick\u00FDm v\u00FDzkumem byly nalezeny optim\u00E1ln\u00ED podm\u00EDnky pro p\u0159\u00EDpravu jak extr\u00E9mn\u011B tenk\u00FDch (pod 10 nm), tak velmi siln\u00FDch (500 nm) vrstev s"@cs . "Low-temperature molecular beam epitaxy of ferromagnetic (Ga,Mn)As"@en . . . . . "GA202/04/1519" . "0"^^ . . "2007-10-16+02:00"^^ . "The technology of preparing the ferromagnetic semiconductor (Ga,Mn)As has been mastered on a competitive level. The optimum growth conditions have been found for growth of both extremely thin (less than 10 nm) and very thick (500 nm) layers with good str"@en . . .