"Mapping at a high spatial resolution of the local density of electron states via reflection of very slow electrons"@en . . "P\u0159i dopadu velmi pomal\u00FDch elektron\u016F o energii pod 20 - 30 eV na povrch pevn\u00E9 l\u00E1tky je m\u00EDra jejich odrazu nep\u0159\u00EDmo \u00FAm\u011Brn\u00E1 lok\u00E1ln\u00ED hustot\u011B elektronov\u00FDch stav\u016F, nav\u00E1zan\u00FDch na dopadaj\u00EDc\u00ED vlnu. Sledov\u00E1n\u00EDm odrazu lze tedy studovat strukturu energiov\u00FDch p\u00E1s\u016F v m\u00EDst\u011B dopadu. Tento jev, experiment\u00E1ln\u011B ov\u011B\u0159en\u00FD v oblasti difrakce pomal\u00FDch elektron\u016F, bude zkoum\u00E1n ve sv\u00E9 mikroskopick\u00E9 verzi s vysok\u00FDm rozli\u0161en\u00EDm a vyu\u017Eit p\u0159i studiu struktur s m\u00EDstn\u00EDmi rozd\u00EDly v elektronick\u00FDch vlastnostech. \u0158\u00EDzen\u00ED energie dopadu elektron\u016F v rastrovac\u00EDm elektronov\u00E9m mikroskopu a udr\u017Een\u00ED vysok\u00E9ho rozli\u0161en\u00ED obrazu a\u017E do nejni\u017E\u0161\u00EDch energi\u00ED umo\u017En\u00ED princip prom\u011Bnn\u00E9 energie svazku s br\u017Ed\u011Bn\u00EDm t\u011Bsn\u011B nad povrchem v katodov\u00E9 \u010Do\u010Dce. Budou provedeny z\u00E1kladn\u00ED demonstra\u010Dn\u00ED experimenty a prok\u00E1z\u00E1na existence p\u0159\u00EDslu\u0161n\u00E9ho kontrastn\u00EDho mechanismu. Metoda pak bude aplikov\u00E1na na zobrazov\u00E1n\u00ED hustoty rozlo\u017Een\u00ED dopant\u016F v polovodi\u010Di p\u0159i energii odpov\u00EDdaj\u00EDc\u00ED p\u0159\u00EDm\u011Bsov\u00E9 hladin\u011B, kdy doch\u00E1z\u00ED ke sn\u00ED\u017Een\u00ED odrazu \u00FAm\u011Brn\u011B po\u010Dtu p\u0159\u00EDm\u011Bsov\u00FDch atom\u016F." . . . "0"^^ . . . . "1"^^ . "Neuvedeno."@en . . . . . "Mapov\u00E1n\u00ED lok\u00E1ln\u00ED hustoty stav\u016F pomoc\u00ED odrazu velmi pomal\u00FDch elektron\u016F p\u0159i vysok\u00E9m prostorov\u00E9m rozli\u0161en\u00ED" . . "GA202/04/0281" . "0"^^ . "20"^^ . . "When very slow electrons below 20 to 30 eV impact the solid surface, their reflection is inversely proportional to the local density of states, coupled to the incident wave, so that the energy band structure in the impact point can be studied. This phenomenon, verified by the low energy electron diffraction experiments, will be employed in its microscopic version at high resolution and applied to investigation of structures with locally variable electronic properties. Efficient control of the landing energy of electrons in the scanning electron microscope and preservation of a high resolution down to lowest energies will be provided by the beam deceleration closely above the surface within the cathode lens. Basic experiments will demonstrate the contrast mechanism and the imaging method will be applied to visualisation of the dopant distribution density in semiconductors at energies of their impurity levels, when the reflection drops proportionally to the number of impurity atoms."@en . "20"^^ . . . . . "Mezi v\u00FDsledky dosa\u017Een\u00E9 p\u0159i \u0159e\u0161en\u00ED projektu pat\u0159\u00ED, \u017Ee byla experiment\u00E1ln\u011B demonstrov\u00E1na metoda z\u00EDsk\u00E1v\u00E1n\u00ED kontrastu elektronick\u00E9 struktury prepar\u00E1tu v rastrovan\u00FDch mikroskopick\u00FDch obrazech velmi pomal\u00FDmi elektrony, a to jak na dopovan\u00FDch oblastech v\u00A0polovo"@cs . . . . "http://www.isvav.cz/projectDetail.do?rowId=GA202/04/0281"^^ . . . "2007-10-16+02:00"^^ . "Results achieved when solving the project include: -\u00A0method of acquiring in very low energy scanned electron micrographs the contrast of electronic structure of the sample has been experimentally demonstrated, both with doped areas in semiconductors and"@en .