. . "Progresivn\u00ED technologie p\u0159\u00EDpravy krystal\u016F polovodi\u010Dov\u00FDch slou\u010Denin metodou elektrodynamick\u00E9ho gradientu a studium jejich vlastnost\u00ED" . "0"^^ . . . "\u0158e\u0161en\u00EDm projektu byly p\u0159ipraveny velmi dobr\u00E9 podm\u00EDnky pro kvalitn\u00ED p\u011Bstov\u00E1n\u00ED monokrystal\u016F slitin typu AIIIBV, kter\u00E9 by m\u011Bly slou\u017Eit pro v\u00FDrobu polovodi\u010Dov\u00FDch prvk\u016F vlnovod\u016F. Projekt nav\u00E1zal na p\u0159edchoz\u00ED \u00FAsp\u011B\u0161n\u011B \u0159e\u0161en\u00FD projekt GA \u010CR 106/95/1323. Po prvn\u00EDm"@cs . . . "10"^^ . . "10"^^ . "Project deals with use of progressive technology of semiconductor compounds crystals on the basis of III-V and multi-component systems with high structural perfectness and process reproducibility satisfying sophisticated criteria for the area of electronics. Preparation of crystals is performed in a resistance segment furnace in horizontal arrangement, using the method of electrodynamic gradient (EDG) and multi-purpose fully automated control system IMP which ensures efficient control of heat flows and creates defined local thermal field at the crystallisation boundary and thus enables increase in crystal quality. Whole system of crystallisation control will be modelled and optimised at various thermal modes. Prepared crystals will be investigated from the viewpoint of their structure, stoichiometry and segregation phenomena, concentration and distribution of failures and physical properties that are important from the point of view of their practical application."@en . "http://www.isvav.cz/projectDetail.do?rowId=GA106/98/0444"^^ . . "0"^^ . . . . . "1"^^ . "Projekt se zab\u00FDv\u00E1 vyu\u017Eit\u00EDm progresivn\u00ED technologie p\u0159\u00EDpravy krystal\u016F polovodi\u010Dov\u00FDch slou\u010Denin na b\u00E1zi III-V a II-VI, p\u0159\u00EDp. v\u00EDcekomponentn\u00EDch syst\u00E9m\u016F s vysokou strukturn\u00ED dokonalost\u00ED a reprodukovatelnost\u00ED procesu, vyhovuj\u00EDc\u00ED n\u00E1ro\u010Dn\u00FDm krit\u00E9ri\u00EDm pro oblastimikroelektroniky. P\u0159\u00EDprava krystal\u016F prob\u00EDh\u00E1 v odporov\u00E9 segmentov\u00E9 peci v horizont\u00E1ln\u00EDm uspo\u0159\u00E1d\u00E1n\u00ED, pracuj\u00EDc\u00ED metodou elektrodynamick\u00E9ho gradientu (EDG) s vyu\u017Eit\u00EDm v\u00EDce\u00FA\u010Delov\u00E9ho pln\u011B automatizovan\u00E9ho \u0159\u00EDd\u00EDc\u00EDho syst\u00E9mu IMP, kter\u00FD zaji\u0161\u0165uje efektivn\u00ED \u0159\u00EDzen\u00ED tepeln\u00FDch tok\u016F a vytvo\u0159\u00ED definovan\u00E9 lok\u00E1ln\u00ED lok\u00E1ln\u00EDho teplotn\u00EDho pole na krystaliza\u010Dn\u00EDm rozhran\u00ED a umo\u017En\u00ED tak zv\u00FD\u0161it kvalitu krystalu. Cel\u00FD \u0159\u00EDd\u00EDc\u00ED proces krystalizace bude modelov\u00E1n a optimalizov\u00E1n p\u0159i r\u016Fzn\u00FDch tepeln\u00FDch re\u017Eimech. P\u0159ipraven\u00E9 krystaly budostudov\u00E1ny z hlediska jejich struktury, stechiometrie a segrega\u010Dn\u00EDch jev\u016F, koncentrace a rozlo\u017Een\u00ED poruch a fyzik\u00E1ln\u00EDch vlastnost\u00ED, kter\u00E9 jsou v\u00FDznamn\u00E9 z hlediska jejich praktick\u00E9 aplikace." . . "Progressive technology of preparation of semiconductor compounds' crystals by electrodynamic gradient method and investigation of their properties"@en . . "GA106/98/0444" . .