"High quality semiinsulating CdTe for gamma ray detectors"@en . . . "20"^^ . . "20"^^ . . . "2008-04-25+02:00"^^ . . . "Byl proveden systematick\u00FD v\u00FDzkum vlivu podm\u00EDnek temperace (teplota, tlak par Cd nebo Te, doba temperace a zp\u016Fsob chlazen\u00ED) na elektrick\u00E9 a optick\u00E9 vlastnosti CdTe:In. Poda\u0159ilo se zv\u00FD\u0161it stupe\u0148 pochopen\u00ED proces\u016F prob\u00EDhaj\u00EDc\u00EDch b\u011Bhem chlazen\u00ED krystal\u016F a vyp"@cs . "2006-01-01+01:00"^^ . " gamma ray detectors" . . "CdTe" . . "0"^^ . . . "http://www.isvav.cz/projectDetail.do?rowId=GA102/06/0258"^^ . "1"^^ . . "2008-12-31+01:00"^^ . "CdTe; gamma ray detectors; defects"@en . . "GA102/06/0258" . "A systematic research of influence of annealing conditions (temperature, vapor pressure of Cd or Te, annealing time and cooling regime) on electrical and optical properties of CdTe:In was performed. The degree of understanding of processes occurring duri"@en . "Vysoce kvalitn\u00ED semiizola\u010Dn\u00ED CdTe pro detektory z\u00E1\u0159en\u00ED gama" . "0"^^ . . . . . "Z\u00E1jem o nechlazen\u00E9 p\u0159enosn\u00E9 detektory z\u00E1\u0159en\u00ED gama prudce narostl b\u011Bhem posledn\u00EDch let vzhledem k aplikac\u00EDm p\u0159i zobrazov\u00E1n\u00ED s vysok\u00FDm rozli\u0161en\u00EDm v medic\u00EDn\u011B\u00A0a v oblasti bezpe\u010Dnosti. C\u00EDlem projektu je p\u0159\u00EDprava vysoce kvalitn\u00EDch semiizola\u010Dn\u00EDch krystal\u016F CdTe a CdZnTe pro detektory z\u00E1\u0159en\u00ED gama metodou tuhnut\u00ED v teplotn\u00EDm gradientu. Pro r\u016Fst krystal\u016F bude pou\u017Eita unik\u00E1tn\u00ED aparatura vyvinut\u00E1 ve Fyzik\u00E1ln\u00EDm \u00FAstavu UK umo\u017E\u0148uj\u00EDc\u00ED plnou kontrolu tlaku par Cd b\u011Bhem cel\u00E9ho procesu r\u016Fstu a\u017E do tlaku 8atm. Vzhledem k tomu, \u017Ee inkluze a nehomogenity m\u0159\u00ED\u017Eky p\u016Fsob\u00ED jako past\u02C7ov\u00E1 a rekombina\u010Dn\u00ED centra, lze o\u010Dek\u00E1vat, ze zv\u00FD\u0161en\u00ED krystalografick\u00E9 kvality povede k vysok\u00FDm hodnot\u00E1m sou\u010Dinu pohyblivosti a doby \u017Eivita nosi\u010D\u016F proudu. Na\u0161e teoretick\u00E9 v\u00FDsledky ukazuj\u00ED, \u017Ee reakce mezi bodov\u00FDmi defekty, kter\u00E9 m\u011Bn\u00ED jejich elektrick\u00FD stav, by m\u011Bly umo\u017Enit p\u0159\u00EDpravu vysokodporov\u00E9ho materi\u00E1lu s velmi n\u00EDzkou hodnotou koncentrace hlubok\u00E9 hladiny v bl\u00EDzkosti st\u0159edu zak\u00E1zan\u00E9ho p\u00E1su, kter\u00E1 z\u00E1sadn\u00EDm zp\u016Fsobem ovliv\u0148uje dobu \u017Eivota voln\u00FDch" . "2009-10-22+02:00"^^ . . . "The interest in non-cooled and portable spectrometric X and gamma-ray detectors increased remarkably in the last years due to applications in high resolution medical imaging of human organs and in security applications. The project is aimed at preparation of semiinsulating detector-grade CdTe and CdZnTe crystals with high crystallographic quality by vertical gradient freeze method in an original middle pressure setup enabling full control of Cd overpressure up to 8atm. Due to the fact, that each inclusion or inhomogeneity of crystal lattice acts as a trap or recombination center, it is expected, that the increased crystallographic quality will lead to high values of mobility-lifetime product of electrons and holes. Our theoretical results show, that defect reactions, which change the electric state of input/output species should allow to produce the semi-insulating CdTe also in the case of significantly reduced density of deep level, which determines the lifetime of carriers. This"@en .