. "18"^^ . "18"^^ . "2008-12-31+01:00"^^ . " rare earths" . "semiconductor materials; indium phosphide (InP); rare earths; detectors"@en . . "2006-01-01+01:00"^^ . . "The aim of the project proposal is the utilization of InP epilayers with the addition of rare earths into the growth melt for the detection of ionizing radiation\u00A0. This novel\u00A0approach, in the context of radiation detection, enables to prepare pure undoped p- type InP layers and generates knowledge relevant for both\u00A0the basic research and\u00A0applications. Two types of detector structures will be prepared and investigated: A) Structure based on bulk semi-insulating (SI) InP material with a thin p-type InP contact layer for X- and\u00A0\u0142- ray detection. SI-InP bulk crystals will be prepared by Czochralski method with various dopants and regimes of temperature annealing and the contact p-InP layer will be grown by liquid phase epitaxy (LPE). B) Structure base on thick p-InP layer for +- particle and\u00A0soft X-\u00A0ray detection. P-type InP layers with thickness\u00A0> 10/um and\u00A0impurity concentrations\u00A0< 1015cm -3 will be prepared by LPE\u00A0on n-type InP Czochralski\u00A0grown substrate. Suitable metal contacts will be"@en . . . . . "GA102/06/0153" . . . "Vyu\u017Eit\u00ED specifick\u00FDch vlastnost\u00ED vz\u00E1cn\u00FDch zemin p\u0159i p\u0159\u00EDprav\u011B detektorov\u00FDch struktur na b\u00E1zi InP" . . "C\u00EDlem p\u0159edkl\u00E1dan\u00E9ho projektu je vyu\u017Eit\u00ED InP epitaxn\u00EDch vrstev p\u011Bstovan\u00FDch s p\u0159\u00EDdavkem vz\u00E1cn\u00FDch zemin do r\u016Fstov\u00E9 taveniny pro detekci ionizuj\u00EDc\u00EDho z\u00E1\u0159en\u00ED\u00A0. Tento p\u016Fvodn\u00ED p\u0159\u00EDstup, v kontextu radia\u010Dn\u00EDch detektor\u016F, umo\u017E\u0148uj\u00EDc\u00ED p\u0159ipravit \u010Dist\u00E9 nedotovan\u00E9 InP vrstvy typu p, p\u0159in\u00E1\u0161\u00ED poznatky, kter\u00E9 se uplatn\u00ED nejen v z\u00E1kladn\u00EDm v\u00FDzkumu, ale i p\u0159i jeho aplikac\u00EDch.\u00A0Budou p\u0159ipraveny a studov\u00E1ny\u00A0dva typy struktur: A) Struktury na b\u00E1zi\u00A0semi-izola\u010Dn\u00EDho (SI) monokrystalick\u00E9ho InP s kontaktovac\u00ED tenkou p-InP vrstvou pro detekci X- a\u00A0\u0142- z\u00E1\u0159en\u00ED. SI-InP bude p\u0159ipraven metodou Czochralsk\u00E9ho za p\u0159\u00EDtomnosti vhodn\u00FDch dopant\u016F a n\u00E1sledn\u00FDm tepeln\u00FDm formov\u00E1n\u00EDm, kontaktn\u00ED p-InP vrstva epitaxn\u00EDm r\u016Fstem z kapaln\u00E9 f\u00E1ze (LPE). B) Struktury na b\u00E1zi\u00A0p-InP vrstev pro detekci\u00A0+ \u010D\u00E1stic a\u00A0m\u011Bkk\u00E9ho X- \u00A0z\u00E1\u0159en\u00ED. Vrstvy s tlou\u0161\u0165kami nad\u00A010/um a koncentracemi elektricky aktivn\u00EDch ne\u010Distot\u00A0pod\u00A01015cm-3\u00A0 budou p\u0159ipraveny\u00A0metodou LPE na monokrystalick\u00FDch n-InP podlo\u017Ek\u00E1ch. Vhodn\u00E9 kovov\u00E9 kontakty budou pro oba typy struktur vakuov\u011B" . . "The aim of the grant project was to exploit specific properties of the rare-earth elements (RE) in preparation of bulk crystals and epitaxial layers on InP basis intended for radiation detection. All REs present in growth melts exhibited various, but in"@en . . . . "semiconductor materials" . . . . " indium phosphide (InP)" . "0"^^ . . . "1"^^ . "1"^^ . "2008-04-25+02:00"^^ . . "Utilization of specific properties of rare earths in preparation of InP based radiation detector structures"@en . "C\u00EDlem \u0159e\u0161en\u00ED grantov\u00E9ho projektu bylo vyu\u017E\u00EDt specifick\u00E9 vlastnosti vz\u00E1cn\u00FDch zemin (RE) p\u0159i p\u0159\u00EDprav\u011B objemov\u00FDch krystal\u016F a epitaxn\u00EDch vrstev na b\u00E1zi InP ur\u010Den\u00FDch pro aplikace v detekci radia\u010Dn\u00EDho z\u00E1\u0159en\u00ED. V\u0161echny RE p\u0159\u00EDtomn\u00E9 v r\u016Fstov\u00FDch tavenin\u00E1ch vyk\u00E1zaly"@cs . "2009-10-22+02:00"^^ . "http://www.isvav.cz/projectDetail.do?rowId=GA102/06/0153"^^ .