. "2009-01-15+01:00"^^ . . "0"^^ . . "GA102/03/0316" . . . "Neuvedeno."@en . "The proposed project is both logical and technical extension of the project %22Photon counting detector for the near infrared%22 supported by the grant 102/00/0820 in 2000-2002. The goal of the project is to develop solid state photon counter, which will beable to detect in the wavelength range of 400 to 1600 nanometers with picosecond timing resolution on the basis of GeSi. The detector will consist of the avalanche photodiode and an electronics active quenching and gating circuit. It will be based on ananalogy to the previously developed detectors on Silicon. The construction of the GeSi based detector is the prolongation of the research conducted in nineties. That time, the research has been slowed down due to the lack of the availability of suitableGeSi material of sufficient Ge concentration and mono-crystal uniformity required for detector construction. These limitations have are over in 2002, our group acquired GeSi waver samples, which are expected to be suitable for photon counting detectors"@en . . . . . . "8"^^ . "8"^^ . . . . . "The solid state photon counter based on GeSi has been developed and tested. The main project output is the solid state technology process of the preparation of shallow PN junction structure on the basis of epitax layer GeSi on a silicon substrate to be a"@en . "0"^^ . . "Detektor jednotliv\u00FDch foton\u016F na b\u00E1zi GeSi" . "GeSi based photon counting detector"@en . "Navrhovan\u00FD projekt je logick\u00FDm i v\u011Bcn\u00FDm pokra\u010Dov\u00E1n\u00EDm projektu %22Detektor jednotliv\u00FDch foton\u016F pro bl\u00EDzkou infra\u010Dervenou oblast%22 \u0159e\u0161en\u00E9ho za podpory GA\u010CR 102/00/0820 v letech 2000-2002. C\u00EDlem navrhovan\u00E9ho projektu je vyvinout polovodi\u010Dov\u00FD detektorjednotliv\u00FDch foton\u016F, kter\u00FD bude detekovat v rozsahu vlnov\u00FDch d\u00E9lek 400 a\u017E 1600 nanometr\u016F s pikosekundov\u00FDm \u010Dasov\u00FDm rozli\u0161en\u00EDm na b\u00E1zi GeSi. Detektor se bude skl\u00E1dat z lavinov\u00E9 diody a elektronick\u00E9ho \u0159\u00EDd\u00EDc\u00EDho obvodu. Bude vyvinut na z\u00E1klad\u011B analogie sexistuj\u00EDc\u00EDm detektorem na b\u00E1zi k\u0159em\u00EDku. Konstrukce lavinov\u00E9 fotodiody na b\u00E1zi GeSi je pokra\u010Dov\u00E1n\u00ED v\u00FDvoje zah\u00E1jen\u00E9ho v devades\u00E1t\u00FDch letech, tehdy byl slibn\u011B se rozb\u00EDhaj\u00EDc\u00ED v\u00FDvoj utlumen omezen\u00EDmi v technologii p\u0159\u00EDpravy substr\u00E1t\u016F GeSi: nebyly dostupn\u00E9substr\u00E1ty s dostate\u010Dn\u011B vysokou koncentrac\u00ED Ge (des\u00EDtky procent) a z\u00E1rove\u0148 s homogenitou po\u017Eadovanou pro konstrukci detektor\u016F jednotliv\u00FDch foton\u016F. Tato omezen\u00ED padla v roce 2002, na\u0161e skupina z\u00EDskala prvn\u00ED vzorky substr\u00E1t\u016F GeSi, kter\u00E9 jsou perspektivn\u00EDch" . . "1"^^ . "Byl vyvinut a testov\u00E1n polovodi\u010Dov\u00FD detektor jednotliv\u00FDch foton\u016F na b\u00E1zi GeSi. Hlavn\u00EDm v\u00FDsledkem je technologie p\u0159\u00EDpravy lavinov\u00E9 diodov\u00E9 struktury na b\u00E1zi epitaxn\u00ED vrstvy GeSi na k\u0159em\u00EDkov\u00E9 podlo\u017Ece. Byly provedeny technologick\u00E9 testy a nalezeny nov\u00E9 pos"@cs . . "http://www.isvav.cz/projectDetail.do?rowId=GA102/03/0316"^^ . . . . .