"From the spin-resolved ARPES spectra measured on various epitaxial Sn(Pb)Te and Sn(Pb)Se heterostructures, we will study the existence of massless spin-polarized surface electron states (Dirac cones) in these novel topological crystalline insulator materials. The dispersion and spin-polarization will be studied as a function of chemical composition as well as epitaxial strain, crossing the bulk zero-gap material when varying the Sn content. We will also determine the influence of the 2D size quantization in thin PbSnTe and PbSnSe quantum well layers on the topological surface states as a function of quantum well thickness as well as the valley splitting required for prohibition of backscattering by time-reversal symmetry as basic property of topological insulators."@en . "Epitaxn\u00ED r\u016Fst a vlastnosti krystalick\u00FDch topologick\u00FDch izol\u00E1tor\u016F" . "http://www.isvav.cz/projectDetail.do?rowId=7AMB14AT019"^^ . . . . "2015-12-31+01:00"^^ . "Budeme studovat existenci spinov\u011B polarizovan\u00FDch povrchov\u00FDch elektronov\u00FDch stav\u016F, kter\u00E9 vykazuj\u00ED nulovou efektivn\u00ED hmotnost (Diracovy ku\u017Eele) pomoc\u00ED spinov\u011B a \u00FAhlov\u011B rozli\u0161en\u00E9 fotoelektronov\u00E9 spektroskopie (metoda ARPES) nov\u00FDch materi\u00E1l\u016F Sn(Pb)Te a Sn(Pb)Se p\u0159ipraven\u00FDch jako epitaxn\u00ED heterostruktury. Bude studov\u00E1na z\u00E1vislost povrchov\u00FDch stav\u016F a jejich disperse na chemick\u00E9m slo\u017Een\u00ED tern\u00E1rn\u00EDch slitin a na heteroepitaxn\u00ED deformaci. S c\u00EDlem naj\u00EDt optim\u00E1ln\u00ED chemick\u00E9 slo\u017Een\u00ED a deformaci, p\u0159i n\u00ED\u017E vznik\u00E1 materi\u00E1l s nulov\u00FDm zak\u00E1zan\u00FDm p\u00E1sem. Budeme d\u00E1le studovat souvislost vlastnost\u00ED topologick\u00FDch povrchov\u00FDch stav\u016F a kvantov\u00E1n\u00ED energie v \u00FAzk\u00FDch kvantov\u00FDch jam\u00E1ch p\u0159edstavovan\u00FDch velmi tenk\u00FDmi vrstvami uveden\u00FDch materi\u00E1l\u016F. Budeme se d\u00E1le zab\u00FDvat sn\u00EDm\u00E1n\u00EDm degenerace minim ve vodivostn\u00EDm p\u00E1su, kter\u00E9 je nutn\u00E9 pro potla\u010Den\u00ED zp\u011Btn\u00E9ho rozptylu nositel\u016F n\u00E1boje." . . . " rtg difrakce" . "2015-05-28+02:00"^^ . . . "topologick\u00E9 izol\u00E1tory; rtg difrakce; fotoelektronov\u00E1 spektroskopie"@en . . "Epitaxial growth and properties of crystalline topological insulators"@en . . . . . . . "1"^^ . . "0"^^ . "topologick\u00E9 izol\u00E1tory" . "2014-01-01+01:00"^^ . "2014-03-31+02:00"^^ . "0"^^ . "7AMB14AT019" . "0"^^ . . . "0"^^ .