"2012-12-31+01:00"^^ . . "III-V-N semiconductors metal nonoparticles Schottky barriers"@en . . "1500"^^ . "0"^^ . . . "8"^^ . . "2010-05-01+01:00"^^ . . . "1500"^^ . . . "8"^^ . . "Prov\u00E9st depozice vrstev kovov\u00FDch nano\u010D\u00E1stic Pd, Pt, Ag a Au z koloidn\u00EDch roztok\u016F na povrchy r\u016Fzn\u00FDch z\u0159ed\u011Bn\u00FDch nitrid\u016F III-V-N a prozkoumat jejich vliv na jejich optick\u00E9, optoelektrick\u00E9 a elektrick\u00E9 vlastnosti."@cs . "V\u00FDzkum kovov\u00FDch nano\u010D\u00E1stic elektroforeticky deponovan\u00FDch na polovodi\u010Dov\u00E9 slou\u010Deniny III-V-N"@cs . . "Study of metal nanoparticle layers deposited by electrophoresis on semiconductor III-V-N compounds"@en . "0"^^ . "Films of metal nanoparticles of Pd, Pt, Ag and Au are deposited by electrophoresis on semiconductor surfaces of III-V-N compounds. The shape and size of nanoparticles in the colloid are monitored by microscopic methods. Deposited films are characterized microscopically by TEM, SEM, AFM, optically by reflection, photoluminescence and Raman spectroscopy at room temperature and at low temperatures down to liquid helium one. Suitable alterations of colloid solutions of metal nanoparticles are provided for enhancement of semiconductor photoluminescence, for rising of the photovoltage at the interface of the semiconductor and metal nanoparticles and in the case of Pd and Pt for an increase of interface sensitivity on hydrogen."@en . "1"^^ . .