. "0"^^ . . "0"^^ . . "1"^^ . "III-V semiconductor heterostructures/nanostructures towards innovative electronic and photonic applications"@en . "0"^^ . . . "1"^^ . . . "Heterostruktury a nanostruktury polovodi\u010D\u016F III-V pro nov\u00E9 elektronick\u00E9 a fotonick\u00E9 aplikace"@cs . . "140"^^ . . "2012-01-01+01:00"^^ . "The project aims at the atomic scale profound understanding and tailoring of growth mechanisms, microstructure and physical properties of highly mismatched III-V heterostructures, quantum dot (QD) nanostructures and metal nanoparticles (MNPs) grown on nanoporous and compact substrates. Periodic porous structures in InP and GaAs will be prepared by electrochemical etching and In(x)Ga(1-x)As(y)P(1-y) layers and InAs/GaAs QDs will be grown by liquid and metal organic vapour phase epitaxy. Schottky barriers will be formed by MNPs deposition onto InP by electrophoresis and by photoinduced decomposition of inorganic salts. Quantitative transmission electron microscopy will be used to study the nucleation mechanisms the microstructure of the epilayers, the shape and size of QDs and MNPs the local interfacial structure and the strain distribution at the heterointerfaces. Physical properties will be characterized by ballistic electron emission spectroscopy, photoluminescence and microcathodoluminescence."@en . "140"^^ . . . . "C\u00EDlem projektu je d\u016Fkladn\u011B pochopit a uzp\u016Fsobit r\u016Fstov\u00E9 mechnismy, mikrostrukturu a fyzik\u00E1ln\u00ED vlastnosti heterostruktur III-V s velk\u00FDm m\u0159\u00ED\u017Ekov\u00FDm nep\u0159izp\u016Fsoben\u00EDm a nanostruktur s kvantov\u00FDmi te\u010Dkami (KT) a kovov\u00FDmi nano\u010D\u00E1sticemi (KNC) na por\u00E9zn\u00EDch a kompaktn\u00EDch substr\u00E1tech. Periodick\u00E9 por\u00E9zn\u00ED struktury v InP a GaAs p\u0159iprav\u00EDme elektrochemick\u00FDm lept\u00E1n\u00EDm a n\u00E1sledn\u011B porosteme vrstvy In(x)Ga(1-x)As(y)P(1-y) a KT InAs/GaAs kapalnou epitax\u00ED a plynnou epitax\u00ED z organokovov\u00FDch slou\u010Denin. Na InP substr\u00E1tech vytvo\u0159\u00EDme Schottkyho bari\u00E9ry nan\u00E1\u0161en\u00EDm KNC elektrofor\u00E9zou a sv\u011Btlem indukovan\u00FDm rozkladem anorganick\u00FDch sol\u00ED. Kvantitativn\u00ED transmisn\u00ED elektronov\u00E1 mikroskopie bude slou\u017Eit ke studiu mechanism\u016F nukleace mikrostruktury epitaxn\u00EDch vrstev, tvaru a velikosti KT a MNP lok\u00E1ln\u00ED struktury rozhran\u00ED a rozlo\u017Een\u00ED deformace na heterorozhran\u00ED. Fyzik\u00E1ln\u00ED vlastnosti budeme charakterizovat pomoc\u00ED balistick\u00E9 elektronov\u00E9 emisn\u00ED spektroskopie, fotoluminiscence a mikrokatodoluminiscence."@cs . "2013-12-31+01:00"^^ . "porous III-V semiconductors; heteroepitaxial growth; LPE; MOVPE; HRTEM; photoluminescence; ballistic electron emission microscopy; metal nanoparticles; Schottky interface."@en .