"307"^^ . . . . "Tento projekt by m\u011Bl plynule navazovat na p\u0159edchoz\u00ED grant reg.\u010D. 203/94/1277 a pokra\u010Dovat ve studiu a p\u0159\u00EDprav\u011B monokrystal\u016F GaSb s n\u00EDzkou koncentrac\u00ED voln\u00FDch nositel\u016F a s vysok\u00FDm m\u011Brn\u00FDm odporem. Hlavn\u00ED d\u016Fraz je kladen na vyu\u017Eit\u00ED vliv\u016F ionizovan\u00E9 vod\u00EDkov\u00E9atmosf\u00E9ry v p\u011Bstovac\u00EDm prostoru a n\u00E1sledn\u00FD \u00FA\u010Dinek magnetick\u00E9ho pole. K tomuto \u00FA\u010Delu bylo ji\u017E v minul\u00E9m grantu postaveno za\u0159\u00EDzen\u00ED, kde lze modifikovat magnetick\u00E9 pole a studovat jeho vliv. Navrhovan\u00FD projekt bude zahrnovat n\u00E1sleduj\u00EDc\u00ED kroky ve v\u011Bdeck\u00E9 oblasti v\u00FDzkumu: a) formulov\u00E1n\u00ED pasivace p\u0159\u00EDm\u011Bs\u00ED (residu\u00E1ln\u00EDch i z\u00E1m\u011Brn\u011B vnesen\u00FDch) z fyzik\u00E1ln\u00EDho hlediska u\u017Eit\u00EDm v\u0161ech dostupn\u00FDch dat b) termodynamick\u00E1 anal\u00FDza procesu pasivace c) p\u011Bstov\u00E1n\u00ED monokrystal\u016F GaSb v atmosf\u00E9\u0159e ionizovan\u00E9ho vod\u00EDku s plynulou \u0159adou koncentrac\u00ED r\u016Fzn\u00FDch n-typov\u00FDch dopant\u016F (telur, selen atd.) a hled\u00E1n\u00ED \u00FA\u010Dinn\u00E9ho oboru dopant\u016F, je\u017E by byl schopn\u00FD p\u0159isp\u011Bt je\u0161t\u011B k v\u011Bt\u0161\u00ED efektivit\u011B kompenzace residu\u00E1ln\u00EDch p-typov\u00FDch p\u0159\u00EDm\u011Bs\u00ED a p\u0159irozen\u00FDch defekt\u016F d) p\u011Bstov\u00E1n\u00ED monokrystal\u016F GaSb v magen"@cs . "1"^^ . "0"^^ . "This project is based on the results of the former grant, No. 203/94/1277. Main goal will be aimed at the study and the growth of the gallium antimonide single crystals with the low carrier concentration and the high resistivity. The crystals will be grown under the hydrogen ionized atmosphere and, in addition, in the magnetic field. To this purpose, the apparatus with the programmable magnetic field has been built up from the previous grant means. This suggested project will consist of the followingscientific points: a) the determination of the passivation of residual impurities from the physical point of view using all reasonable data b) the thermodynamical analysis of the passivation process c) the growth of the GaSb single crystals under the hydrogen ionized atmosphere with the series of different concentrations of n-type dopants (tellurium, selenium, etc.) and the study of suitable conditions increasing the compensation of residual p-type impurities and natural defects d) the growth of the"@en . "307"^^ . . "Growth and study of gallium antimonide single crystals with low free carrier concentration and high resistivity for epitaxial application"@en . "0"^^ . . . "1"^^ . "P\u011Bstov\u00E1n\u00ED a studium monokrystal\u016F gallium antimonidu s n\u00EDzkou koncentrac\u00ED voln\u00FDch nositel\u016F a vysok\u00FDm m\u011Brn\u00FDm odporem pro p\u0159\u00EDpravu podlo\u017Eek k epitaxn\u00EDm technol."@cs . . . . "1"^^ . . .