"0"^^ . "P\u0159\u00EDprava a charakterizace polovodi\u010Dov\u00FDch epitaxn\u00EDch MOVPE vrstev a struktur na b\u00E1zi GaSb"@cs . . "1"^^ . "476"^^ . . . . "The aim of the project is in characterising and optimising the growth of GaSb based semiconductor layers from different precursors using Metal}{lang1029 -}{Organic Vapour Phase Epitaxy (MOVPE). These materials may be suitable namely for the preparation of detectors and laser diodes emitting in the mid-infrared range. As precursors, the following materials will be used: trimethylgallium (TMGa) or triethylgallium (TEGa), arsin (AsH}{sub 3}{) or tertiarybutylarsin (TBAs), trimethylaluminium (TMAl) or tristertiarybutylaluminium (TTBAl) and trisdimethylaminoantimony (TDMASb) or triethylantimony (TESb), while the suitability of using the given precursors will be discussed and compared from the viewpoint of mutual compatibility during growth as well as from the viewpoint of their thermal (temperature) decomposition and thus also the quality of the layer prepared. We can expect that the layers, prepared from newly developed precursors, which thanks to weaker chemical bonds of metal-organic radical show"@en . "0"^^ . . . . "Preparation and characterization of epitaxial semiconductor MOVPE layers and structure based on GaSb"@en . . . . "1"^^ . "476"^^ . . "1"^^ . "Navrhovan\u00FD projekt se t\u00FDk\u00E1 p\u0159\u00EDpravy, charakterizace a optimalizace r\u016Fstu polovodi\u010Dov\u00FDch vrstev na b\u00E1zi Sb (bin\u00E1rn\u00EDch i tern\u00E1rn\u00EDch) z r\u016Fzn\u00FDch prekurzor\u016F pomoc\u00ED MOVPE (Metal Organic Vapour Phase Epitaxy). Tyto materi\u00E1ly budou vhodn\u00E9 zejm\u00E9na pro p\u0159\u00EDpravu detektor\u016F a laserov\u00FDch diod emituj\u00EDc\u00EDch p\u0159i vy\u0161\u0161\u00EDch teplot\u00E1ch ve st\u0159edn\u011Bvlnn\u00E9 infra\u010Derven\u00E9 oblasti (2-5 um). Jako prekurzory budou pou\u017Eity trimethylgallium (TMGa) nebo triethylgallium (TEGa), arsin (AsH3) nebo tertiarybutylarsin (TBAs), trimethylaluminiu(TMAl) nebo tristertiarybutylaluminium (TTBAl) a trisdimethylaminoantimon (TDMASb) nebo triethylantimon (TESb), p\u0159i\u010Dem\u017E bude diskutov\u00E1na a porovn\u00E1v\u00E1na vhodnost pou\u017Eit\u00ED uveden\u00FDch prekurzor\u016F z hlediska vz\u00E1jemn\u00E9 slu\u010Ditelnosti b\u011Bhem r\u016Fstu a rovn\u011B\u017E z hlediskajejich teplotn\u00EDho rozkladu a t\u00EDm i kvality vznikl\u00E9 vrstvy. D\u00E1 se o\u010Dek\u00E1vat, \u017Ee vznikl\u00E9 vrstvy, p\u0159ipravovan\u00E9 z nov\u011B vyvinut\u00FDch prekurzor\u016F, kter\u00E9 d\u00EDky slab\u0161\u00EDm chemick\u00FDm vazb\u00E1m kov - organick\u00FD radik\u00E1l maj\u00ED ni\u017E\u0161\u00ED teploty rozkladu, by mohly m\u00EDt lep\u0161\u00ED kvalitu n"@cs .