"Recombination in Power Semiconductor Devices"@en . . "Rekombinace ve v\u00FDkonov\u00FDch polovodi\u010Dov\u00FDch sou\u010D\u00E1stk\u00E1ch"@cs . ""@en . "0"^^ . "423"^^ . . . "423"^^ . . "Projekt je zam\u011B\u0159en na v\u00FDzkum v oblasti problematiky technologick\u00E9ho ovliv\u0148ov\u00E1n\u00ED doby \u017Eivota nerovnov\u00E1\u017En\u00FDch nosi\u010D\u016F ve struktur\u00E1ch v\u00FDkonov\u00FDch polovodi\u010Dov\u00FDch sou\u010D\u00E1stek. Bude \u0159e\u0161ena problematika interstici\u00E1ln\u011B-substitu\u010Dn\u00ED difuze vhodn\u00FDch p\u0159\u00EDm\u011Bs\u00ED (Pt, Pd, Ir atd.) ve spojitosti s vlivem bodov\u00FDch poruch vznikaj\u00EDc\u00EDch p\u0159i vysokoteplotn\u00EDch operac\u00EDch s c\u00EDlem vytv\u00E1\u0159en\u00ED definovan\u00E9ho gradientu rekombina\u010Dn\u00EDch center ve struktur\u00E1ch sou\u010D\u00E1stek. Experiment\u00E1ln\u011B budou zji\u0161\u0165ov\u00E1ny koncentra\u010Dn\u00ED profily, vliv p\u0159\u00EDm\u011Bs\u00ED na dobu\u017Eivota nosi\u010D\u016F a dal\u0161\u00ED parametry polovodi\u010Dov\u00FDch struktur a parametry vznikl\u00FDch rekombina\u010Dn\u00EDch center. V\u00FDsledky budou m\u00EDt praktick\u00E9 vyu\u017Eit\u00ED p\u0159i optimalizaci dynamick\u00FDch parametr\u016F modern\u00EDch typ\u016F v\u00FDkonov\u00FDch polovodi\u010Dov\u00FDch sou\u010D\u00E1stek."@cs . . "1"^^ . . "0"^^ . . . . . "0"^^ . "0"^^ . . .