"0"^^ . . "thin films; hollow cathode sputtering; plasmajet; BSTO; PZT; TiOx; emission spectroscopy; langmuir probe; impedance"@en . . . . "2009-12-31+01:00"^^ . "9"^^ . . "9"^^ . "0"^^ . "2007-01-01+01:00"^^ . "N\u00EDzkoteplotn\u00ED plazmatick\u00E1 depozice polykrystalick\u00FDch a nanokrystalick\u00FDch oxidov\u00FDch tenk\u00FDch vrstev pomoc\u00ED syst\u00E9mu dut\u00FDch katod"@cs . . "1618"^^ . "Low-temperature plasmatic deposition of polycrystalline and nanocrystalline oxide thin films by systems with hollow cathodes"@en . "1618"^^ . . "The low temperature deposition of high quality oxide thin films by the multi-plasma jet system will be investigated. Advanced methods of 'in situ' plasma diagnostics will be used and extended. The main interest will be to deposit ferroelectric Ba1-xSrxTiO3 and PbZr1-xTixO3 thin films at low temperature with good dielectric and ferroelectric properties. These parameters will be measured in a wide range of frequencies and temperatures. The main target will be to control the structure with the size of crystallites, accuracy of required chemical composition, density of defects as oxygen vacancies and dielectric properties in dependence on the measured plasma parameters. The doped and gradient perovskite films should be deposited as well. The next target will be to deposit high quality anatase nanocrystalline films with high quality of structure, low density of vacancies and precise stoichiometry. The main interests will be to obtain high deposition rate and good photocatalytic properties."@en . . . "Navrhovan\u00FD projekt bude zam\u011B\u0159en na n\u00EDzkoteplotn\u00ED depozici vybran\u00FDch oxidov\u00FDch tenk\u00FDch vrstev pomoc\u00ED v\u00EDcetryskov\u00E9ho plazmov\u00E9ho syst\u00E9mu. K m\u011B\u0159en\u00ED parametr\u016F plazmatu v pr\u016Fb\u011Bhu depozice budou pou\u017Eity a roz\u0161\u00ED\u0159eny pokro\u010Dil\u00E9 diagnostick\u00E9 metody. Hlavn\u00EDm c\u00EDlem bude depozice tenk\u00FDch feroelektrick\u00FDch vrstev Ba1-xSrxTiO3 a PbZr1-xTixO3 za n\u00EDzk\u00FDch teplot s kvalitn\u00EDmi dielektrick\u00FDmi a feroelektrick\u00FDmi vlastnostmi. Tyto parametry budou m\u011B\u0159eny v \u0161irok\u00E9m rozp\u011Bt\u00ED frekvenc\u00ED a teplot. D\u016Fraz bude kladen na kontrolovanou depozici z hlediska velikosti zrn, p\u0159esnosti po\u017Eadovan\u00E9ho chemick\u00E9ho slo\u017Een\u00ED, hustoty defekt\u016F, kysl\u00EDkov\u00FDch vakanc\u00ED a dielektrick\u00FDch vlastnost\u00ED v z\u00E1vislosti na m\u011B\u0159en\u00FDch parametrech plazmatu. Zvl\u00E1dnut\u00ED p\u0159edchoz\u00EDch \u00FAkol\u016F umo\u017En\u00ED deponovat gradientn\u00ED perovskitov\u00E9 vrstvy. Dal\u0161\u00EDm \u00FAkolem bude depozice vysoce kvalitn\u00EDch nanokrystalick\u00FDch vrstev anatasu s malou hustotou vakanc\u00ED a p\u0159esnou stechiometri\u00ED. C\u00EDlem bude dos\u00E1hnout vysok\u00E9 depozi\u010Dn\u00ED rychlosti a velmi dobr\u00FDch fotokatalytick\u00FDch vlastnost\u00ED."@cs . . "1"^^ .