This HTML5 document contains 49 embedded RDF statements represented using HTML+Microdata notation.

The embedded RDF content will be recognized by any processor of HTML5 Microdata.

Namespace Prefixes

PrefixIRI
dctermshttp://purl.org/dc/terms/
n21http://localhost/temp/predkladatel/
n11http://linked.opendata.cz/resource/domain/vavai/riv/tvurce/
n7http://linked.opendata.cz/resource/domain/vavai/projekt/
n6http://linked.opendata.cz/resource/domain/vavai/subjekt/
n5http://linked.opendata.cz/ontology/domain/vavai/
shttp://schema.org/
n14http://linked.opendata.cz/resource/domain/vavai/vysledek/RIV%2F68407700%3A21670%2F13%3A00214501%21RIV14-MSM-21670___/
skoshttp://www.w3.org/2004/02/skos/core#
rdfshttp://www.w3.org/2000/01/rdf-schema#
n3http://linked.opendata.cz/ontology/domain/vavai/riv/
n13http://bibframe.org/vocab/
n2http://linked.opendata.cz/resource/domain/vavai/vysledek/
rdfhttp://www.w3.org/1999/02/22-rdf-syntax-ns#
n12http://linked.opendata.cz/ontology/domain/vavai/riv/klicoveSlovo/
n10http://linked.opendata.cz/ontology/domain/vavai/riv/duvernostUdaju/
xsdhhttp://www.w3.org/2001/XMLSchema#
n18http://linked.opendata.cz/ontology/domain/vavai/riv/jazykVysledku/
n4http://linked.opendata.cz/ontology/domain/vavai/riv/aktivita/
n9http://linked.opendata.cz/ontology/domain/vavai/riv/obor/
n8http://linked.opendata.cz/ontology/domain/vavai/riv/druhVysledku/
n20http://reference.data.gov.uk/id/gregorian-year/

Statements

Subject Item
n2:RIV%2F68407700%3A21670%2F13%3A00214501%21RIV14-MSM-21670___
rdf:type
n5:Vysledek skos:Concept
rdfs:seeAlso
http://www.sciencedirect.com/science/article/pii/S0168900213007973
dcterms:description
Studies of radiation induced defects continue to be relevant as they find an ever greater application due to the increasing radiation doses to which semiconductor detectors are exposed. Efforts of figuring out the changes due to high radiation doses provide the fundamental motivation for this type of experiments. The PIN diode is described, and a developmental disorder caused thereto by 60Co source gamma quanta ranging from 100 kGy to 1 EV1Gy. The calibration curve shows the effect of disturbances on the volt-ampere characteristics as a function of the close of gamma radiation. The results are compared with earlier published data. Studies of radiation induced defects continue to be relevant as they find an ever greater application due to the increasing radiation doses to which semiconductor detectors are exposed. Efforts of figuring out the changes due to high radiation doses provide the fundamental motivation for this type of experiments. The PIN diode is described, and a developmental disorder caused thereto by 60Co source gamma quanta ranging from 100 kGy to 1 EV1Gy. The calibration curve shows the effect of disturbances on the volt-ampere characteristics as a function of the close of gamma radiation. The results are compared with earlier published data.
dcterms:title
Development of defects in the structure of PIN dosimetry diodes exposed to gamma radiation Development of defects in the structure of PIN dosimetry diodes exposed to gamma radiation
skos:prefLabel
Development of defects in the structure of PIN dosimetry diodes exposed to gamma radiation Development of defects in the structure of PIN dosimetry diodes exposed to gamma radiation
skos:notation
RIV/68407700:21670/13:00214501!RIV14-MSM-21670___
n5:predkladatel
n6:orjk%3A21670
n3:aktivita
n4:P n4:V n4:S
n3:aktivity
P(LA08032), S, V
n3:cisloPeriodika
730
n3:dodaniDat
n20:2014
n3:domaciTvurceVysledku
n11:8256594 n11:5587905
n3:druhVysledku
n8:J
n3:duvernostUdaju
n10:S
n3:entitaPredkladatele
n14:predkladatel
n3:idSjednocenehoVysledku
69114
n3:idVysledku
RIV/68407700:21670/13:00214501
n3:jazykVysledku
n18:eng
n3:klicovaSlova
Si PIN diode; Dosimetry; Gamma flux; Energy traps; DLTS
n3:klicoveSlovo
n12:Dosimetry n12:Energy%20traps n12:Si%20PIN%20diode n12:DLTS n12:Gamma%20flux
n3:kodStatuVydavatele
NL - Nizozemsko
n3:kontrolniKodProRIV
[54EAA3DC01E8]
n3:nazevZdroje
Nuclear Instruments and Methods in Physics Research, Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
n3:obor
n9:BG
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
4
n3:projekt
n7:LA08032
n3:rokUplatneniVysledku
n20:2013
n3:svazekPeriodika
730
n3:tvurceVysledku
Sopko, Bruno Dammer, Jiří Sopko, Vít Chren, Dominik
n3:wos
000326944100030
s:issn
0168-9002
s:numberOfPages
3
n13:doi
10.1016/j.nima.2013.05.175
n21:organizacniJednotka
21670