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Statements

Subject Item
n2:RIV%2F68407700%3A21670%2F12%3A00191447%21RIV15-MSM-21670___
rdf:type
skos:Concept n19:Vysledek
rdfs:seeAlso
http://iopscience.iop.org/1748-0221/7/01/C01096
dcterms:description
Neutron radiation cannot be directly detected in semiconductor detectors and therefore needs converter layers. Planar clean-room processing can be used in the manufacturing process of semiconductor detectors with metal layers to produce a cost-effective device. We used the Geant4 Monte-Carlo toolkit to simulate the performance of a semiconductor neutron detector. A silicon photo-diode was coated with vapour deposited titanium, aluminium thin films and a titaniumdiboride (TiB2) neutron absorber layer. The neutron capture reaction 10B(n, alpha)7Li is taken advantage of to create charged particles that can be counted. Boron-10 has a natural abundance of about SI 19.8%. The emitted alpha particles are absorbed in the underlying silicon detector. We varied the thickness of the converter layer and ran the simulation with a thermal neutron source in order to find the best efficiency of the TiB2 converter layer and optimize the clean room process. Neutron radiation cannot be directly detected in semiconductor detectors and therefore needs converter layers. Planar clean-room processing can be used in the manufacturing process of semiconductor detectors with metal layers to produce a cost-effective device. We used the Geant4 Monte-Carlo toolkit to simulate the performance of a semiconductor neutron detector. A silicon photo-diode was coated with vapour deposited titanium, aluminium thin films and a titaniumdiboride (TiB2) neutron absorber layer. The neutron capture reaction 10B(n, alpha)7Li is taken advantage of to create charged particles that can be counted. Boron-10 has a natural abundance of about SI 19.8%. The emitted alpha particles are absorbed in the underlying silicon detector. We varied the thickness of the converter layer and ran the simulation with a thermal neutron source in order to find the best efficiency of the TiB2 converter layer and optimize the clean room process.
dcterms:title
Simulation of a silicon neutron detector coated with TiB2 absorber Simulation of a silicon neutron detector coated with TiB2 absorber
skos:prefLabel
Simulation of a silicon neutron detector coated with TiB2 absorber Simulation of a silicon neutron detector coated with TiB2 absorber
skos:notation
RIV/68407700:21670/12:00191447!RIV15-MSM-21670___
n3:aktivita
n8:P
n3:aktivity
P(LA08015)
n3:cisloPeriodika
7
n3:dodaniDat
n6:2015
n3:domaciTvurceVysledku
n11:7844670 n11:9985522 Petersson, Carl Sture
n3:druhVysledku
n4:J
n3:duvernostUdaju
n14:S
n3:entitaPredkladatele
n18:predkladatel
n3:idSjednocenehoVysledku
167985
n3:idVysledku
RIV/68407700:21670/12:00191447
n3:jazykVysledku
n20:eng
n3:klicovaSlova
Detector modelling and simulations; Solid state detectors; Neutron detectors (cold, thermal, fast neutrons)
n3:klicoveSlovo
n15:Solid%20state%20detectors n15:Neutron%20detectors%20%28cold n15:fast%20neutrons%29 n15:thermal n15:Detector%20modelling%20and%20simulations
n3:kodStatuVydavatele
IT - Italská republika
n3:kontrolniKodProRIV
[2B3ACF82AD52]
n3:nazevZdroje
Journal of Instrumentation
n3:obor
n16:BF
n3:pocetDomacichTvurcuVysledku
3
n3:pocetTvurcuVysledku
6
n3:projekt
n9:LA08015
n3:rokUplatneniVysledku
n6:2012
n3:svazekPeriodika
2012
n3:tvurceVysledku
Petersson, Carl Sture Pospíšil, Stanislav Krapohl, D. Slavíček, Tomáš
n3:wos
000303806200096
s:issn
1748-0221
s:numberOfPages
7
n12:doi
10.1088/1748-0221/7/01/C01096
n17:organizacniJednotka
21670