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Statements

Subject Item
n2:RIV%2F68407700%3A21670%2F10%3A00177086%21RIV11-MSM-21670___
rdf:type
n17:Vysledek skos:Concept
dcterms:description
In this work we have examined the process of defect annealing of neutron transmutation phosphorus-doped n-type silicone (NTD) detector irradiated by neutrons. Radiation defects produced during irradiation of float zone silicon were characterized by means of DLTS. Band gap position, capture cross section of detected levels appearing during irradiation have been measured in order to identify the radiation centers. Obtained experimental results will be further utilized for optimization of the techniques and methods used in the production of silicon power devices, i.e. to the development of studies and experiments aimed on increasing the radiation hardness of silicon detectors used in nuclear accelerators. In this work we have examined the process of defect annealing of neutron transmutation phosphorus-doped n-type silicone (NTD) detector irradiated by neutrons. Radiation defects produced during irradiation of float zone silicon were characterized by means of DLTS. Band gap position, capture cross section of detected levels appearing during irradiation have been measured in order to identify the radiation centers. Obtained experimental results will be further utilized for optimization of the techniques and methods used in the production of silicon power devices, i.e. to the development of studies and experiments aimed on increasing the radiation hardness of silicon detectors used in nuclear accelerators.
dcterms:title
Study of technological and radiation defects in silicon Study of technological and radiation defects in silicon
skos:prefLabel
Study of technological and radiation defects in silicon Study of technological and radiation defects in silicon
skos:notation
RIV/68407700:21670/10:00177086!RIV11-MSM-21670___
n4:aktivita
n21:Z
n4:aktivity
Z(MSM6840770029)
n4:dodaniDat
n12:2011
n4:domaciTvurceVysledku
n10:8256594
n4:druhVysledku
n6:D
n4:duvernostUdaju
n16:S
n4:entitaPredkladatele
n15:predkladatel
n4:idSjednocenehoVysledku
290841
n4:idVysledku
RIV/68407700:21670/10:00177086
n4:jazykVysledku
n8:eng
n4:klicovaSlova
silicon; defects; DLTS
n4:klicoveSlovo
n11:DLTS n11:silicon n11:defects
n4:kontrolniKodProRIV
[F4BE725474FA]
n4:mistoKonaniAkce
ROZNOV POD RADHOSTEM
n4:mistoVydani
Rožnov pod Radhoštěm
n4:nazevZdroje
Silicon 2010
n4:obor
n14:BF
n4:pocetDomacichTvurcuVysledku
1
n4:pocetTvurcuVysledku
4
n4:rokUplatneniVysledku
n12:2010
n4:tvurceVysledku
Semenko, Serhiy Sopko, Vít Semenko, Oleksandr Sopko, Bruno
n4:typAkce
n5:WRD
n4:zahajeniAkce
2010-11-02+01:00
n4:zamer
n19:MSM6840770029
s:numberOfPages
6
n13:hasPublisher
TECON-Scientific
n18:isbn
978-80-254-7361-0
n9:organizacniJednotka
21670