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Statements

Subject Item
n2:RIV%2F68407700%3A21340%2F13%3A00211927%21RIV14-MSM-21340___
rdf:type
skos:Concept n13:Vysledek
dcterms:description
In this work, photoluminescence (PL) and electroluminescence (EL) of samples with InAs/GaAs quantum dots were measured with electric voltage or current applied on the structure. The EL structures emitting at 1300 nm were prepa- red by using n-type substrate. By applying the electric voltage in reverse bias on the sample, the evinced PL may be switched off - it decreases rapidly with the applied voltage and is negligible at about 10 V. Such structures which PL intensity is tunable by applied voltage have a broad spectrum of applications in optoelectronics. In this work, photoluminescence (PL) and electroluminescence (EL) of samples with InAs/GaAs quantum dots were measured with electric voltage or current applied on the structure. The EL structures emitting at 1300 nm were prepa- red by using n-type substrate. By applying the electric voltage in reverse bias on the sample, the evinced PL may be switched off - it decreases rapidly with the applied voltage and is negligible at about 10 V. Such structures which PL intensity is tunable by applied voltage have a broad spectrum of applications in optoelectronics.
dcterms:title
Luminescence of quantum dot heterostructures in applied electric field Luminescence of quantum dot heterostructures in applied electric field
skos:prefLabel
Luminescence of quantum dot heterostructures in applied electric field Luminescence of quantum dot heterostructures in applied electric field
skos:notation
RIV/68407700:21340/13:00211927!RIV14-MSM-21340___
n13:predkladatel
n18:orjk%3A21340
n3:aktivita
n21:S
n3:aktivity
S
n3:dodaniDat
n17:2014
n3:domaciTvurceVysledku
n12:9398236 n12:1499874
n3:druhVysledku
n7:D
n3:duvernostUdaju
n19:S
n3:entitaPredkladatele
n4:predkladatel
n3:idSjednocenehoVysledku
85579
n3:idVysledku
RIV/68407700:21340/13:00211927
n3:jazykVysledku
n11:eng
n3:klicovaSlova
Quantum dot; InAs/GaAs; GaAsSb, luminescence
n3:klicoveSlovo
n6:luminescence n6:GaAsSb n6:Quantum%20dot n6:InAs%2FGaAs
n3:kontrolniKodProRIV
[D1E35697EC69]
n3:mistoKonaniAkce
Dvorská bouda
n3:mistoVydani
Praha
n3:nazevZdroje
Třetí studentská vědecká konference fyziky pevných látek
n3:obor
n16:BM
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
8
n3:rokUplatneniVysledku
n17:2013
n3:tvurceVysledku
Hulicius, E. Petříček, O. Oswald, J. Kuldová, K. Kubištová, Jana Pangrác, J. Hospodková, A. Zíková, Markéta
n3:typAkce
n8:EUR
n3:zahajeniAkce
2013-06-28+02:00
s:numberOfPages
6
n14:hasPublisher
České vysoké učení technické v Praze. Fakulta jaderná a fyzikálně inženýrská
n10:isbn
978-80-01-05344-7
n15:organizacniJednotka
21340