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Statements

Subject Item
n2:RIV%2F68407700%3A21340%2F10%3A00177369%21RIV11-MSM-21340___
rdf:type
skos:Concept n14:Vysledek
dcterms:description
The vital demand for contemporary industry of real time NDE sensors is in field operation, which often surrounded by harsh electromagnetic environment such as high level EMI fields or high level of X-Ray or nuclear radiation. Contemporary CCD image sensors are highly vulnerable even for 0.5 volt EMI fields and highly vulnerable for x-ray and gamma radiation. The high lever radiation such as 50keV, 100kev, 150keV, 200keV, 300keV, 420keV, is extremely dangerous for human body. CCD image sensors are vulnerable to that radiation level. We proposed doped single crystal 3D image sensor for the real time NDE measurement. Proposed sensor was not vulnerable to electromagnetic field produced by High Voltage Tesla generator and to the high level X-ray radiation: 50keV, 100kev, 150keV 200keV, 300keV, 420keV. Vulnerability and degradation of CCD image sensor to 40keV and 50keV X-Ray radiation was demonstrated and documented. The vital demand for contemporary industry of real time NDE sensors is in field operation, which often surrounded by harsh electromagnetic environment such as high level EMI fields or high level of X-Ray or nuclear radiation. Contemporary CCD image sensors are highly vulnerable even for 0.5 volt EMI fields and highly vulnerable for x-ray and gamma radiation. The high lever radiation such as 50keV, 100kev, 150keV, 200keV, 300keV, 420keV, is extremely dangerous for human body. CCD image sensors are vulnerable to that radiation level. We proposed doped single crystal 3D image sensor for the real time NDE measurement. Proposed sensor was not vulnerable to electromagnetic field produced by High Voltage Tesla generator and to the high level X-ray radiation: 50keV, 100kev, 150keV 200keV, 300keV, 420keV. Vulnerability and degradation of CCD image sensor to 40keV and 50keV X-Ray radiation was demonstrated and documented.
dcterms:title
Real Time NDE 3D Image Sensor for Harsh Electromagnetic Environment Real Time NDE 3D Image Sensor for Harsh Electromagnetic Environment
skos:prefLabel
Real Time NDE 3D Image Sensor for Harsh Electromagnetic Environment Real Time NDE 3D Image Sensor for Harsh Electromagnetic Environment
skos:notation
RIV/68407700:21340/10:00177369!RIV11-MSM-21340___
n4:aktivita
n18:Z
n4:aktivity
Z(MSM6840770022)
n4:dodaniDat
n16:2011
n4:domaciTvurceVysledku
n7:4575237 n7:9500774
n4:druhVysledku
n9:D
n4:duvernostUdaju
n17:S
n4:entitaPredkladatele
n15:predkladatel
n4:idSjednocenehoVysledku
284031
n4:idVysledku
RIV/68407700:21340/10:00177369
n4:jazykVysledku
n10:eng
n4:klicovaSlova
crystal sensor; real time; NDE; electromagnetic interference; X-ray
n4:klicoveSlovo
n5:electromagnetic%20interference n5:real%20time n5:crystal%20sensor n5:X-ray n5:NDE
n4:kontrolniKodProRIV
[00831FB5D14C]
n4:mistoKonaniAkce
San Diego
n4:mistoVydani
Washington
n4:nazevZdroje
Sensors and Smart Structures Technologies for Civil, Mechanical, and Aerospace Systems 2010 (Proceedings Volume)
n4:obor
n12:BH
n4:pocetDomacichTvurcuVysledku
2
n4:pocetTvurcuVysledku
4
n4:rokUplatneniVysledku
n16:2010
n4:tvurceVysledku
Wu, Y. Prokop, Josef Dovgalenko, G. Bodnár, Michal
n4:typAkce
n8:WRD
n4:zahajeniAkce
2010-03-07+01:00
n4:zamer
n21:MSM6840770022
s:numberOfPages
10
n20:hasPublisher
SPIE - The International Society for Optical Engineering
n19:isbn
978-0-8194-8062-0
n11:organizacniJednotka
21340