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Statements

Subject Item
n2:RIV%2F68407700%3A21340%2F06%3A04126689%21RIV07-AV0-21340___
rdf:type
n7:Vysledek skos:Concept
dcterms:description
A new method of fabrication of nanocrystalline silicon-based light-emitting-devices is introduced. Si nanocrystals are derived from combustion or pyrolysis of silane and etched subsequently in a two-phase solution of HF. The p–i–n diodes have an active layer (20–60 nm) of Si nanocrystals sandwiched between thin isolating layers of SiO2 or a-Si : H and a top-layer of p+ doped silicon, the substrate being of n+ Si. For both types of structures, electroluminescence is observed under forward bias exceeding 5 V and the spectrum consists of a broad band (due to a large size distribution of Si nanocrystals) centred around 650 nm and giving a yellowish appearance when observed by naked-eye. The integrated electroluminescence intensity growths with the square of applied bias. Není k dispozici A new method of fabrication of nanocrystalline silicon-based light-emitting-devices is introduced. Si nanocrystals are derived from combustion or pyrolysis of silane and etched subsequently in a two-phase solution of HF. The p–i–n diodes have an active layer (20–60 nm) of Si nanocrystals sandwiched between thin isolating layers of SiO2 or a-Si : H and a top-layer of p+ doped silicon, the substrate being of n+ Si. For both types of structures, electroluminescence is observed under forward bias exceeding 5 V and the spectrum consists of a broad band (due to a large size distribution of Si nanocrystals) centred around 650 nm and giving a yellowish appearance when observed by naked-eye. The integrated electroluminescence intensity growths with the square of applied bias.
dcterms:title
Není k dispozici Electroluminiscence of Silicon Nanocrystals in p-i-n Diodes Structure Electroluminiscence of Silicon Nanocrystals in p-i-n Diodes Structure
skos:prefLabel
Není k dispozici Electroluminiscence of Silicon Nanocrystals in p-i-n Diodes Structure Electroluminiscence of Silicon Nanocrystals in p-i-n Diodes Structure
skos:notation
RIV/68407700:21340/06:04126689!RIV07-AV0-21340___
n3:strany
775;777
n3:aktivita
n5:S n5:P
n3:aktivity
P(KAN400670651), S
n3:cisloPeriodika
0
n3:dodaniDat
n10:2007
n3:domaciTvurceVysledku
n14:6934803
n3:druhVysledku
n17:J
n3:duvernostUdaju
n11:S
n3:entitaPredkladatele
n16:predkladatel
n3:idSjednocenehoVysledku
473784
n3:idVysledku
RIV/68407700:21340/06:04126689
n3:jazykVysledku
n15:eng
n3:klicovaSlova
electroluminescence; pin diode; quantum dot; quantum nanostructure; silicon nanocrystal
n3:klicoveSlovo
n6:pin%20diode n6:silicon%20nanocrystal n6:quantum%20nanostructure n6:quantum%20dot n6:electroluminescence
n3:kodStatuVydavatele
CH - Švýcarská konfederace
n3:kontrolniKodProRIV
[B6F2D76D4AF7]
n3:nazevZdroje
Thin Solid Films
n3:obor
n13:JA
n3:pocetDomacichTvurcuVysledku
1
n3:pocetTvurcuVysledku
6
n3:projekt
n9:KAN400670651
n3:rokUplatneniVysledku
n10:2006
n3:svazekPeriodika
515
n3:tvurceVysledku
Pelant, I. Fojtík, Anton Stuchlík, J. Valenta, J. Kočka, J. Stuchlíková, T. H.
s:issn
0040-6090
s:numberOfPages
3
n18:organizacniJednotka
21340