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Statements

Subject Item
n2:RIV%2F68407700%3A21340%2F06%3A04120930%21RIV07-MSM-21340___
rdf:type
n9:Vysledek skos:Concept
dcterms:description
Solid-state single photon detectors based on avalanche photodiode are getting more attention in various areas of applied physics: optical sensors, quantum key distribution, optical ranging and Lidar, time-resolved spectroscopy, X-ray laser diagnostics, and turbid media imaging. Avalanche photodiodes specifically designed for single photon counting semiconductor avalanche structures have been developed on the basis of various materials: Si, Ge, GaP, GaAsP, and InGaP/InGaAs at the Czech Technical University in Prague during the last 20 years. Electrical crosstalk between individual gating and quenching circuits and optical crosstalk between individual detecting cells are serious limitation for array design and performance. Optical crosstalk is caused by the parasitic light emission of the avalanche which accompanies the photon detection process. We have studied in detail the optical emission of the avalanche photon counting structure in the silicon- and gallium-based photodiodes. Solid-state single photon detectors based on avalanche photodiode are getting more attention in various areas of applied physics: optical sensors, quantum key distribution, optical ranging and Lidar, time-resolved spectroscopy, X-ray laser diagnostics, and turbid media imaging. Avalanche photodiodes specifically designed for single photon counting semiconductor avalanche structures have been developed on the basis of various materials: Si, Ge, GaP, GaAsP, and InGaP/InGaAs at the Czech Technical University in Prague during the last 20 years. Electrical crosstalk between individual gating and quenching circuits and optical crosstalk between individual detecting cells are serious limitation for array design and performance. Optical crosstalk is caused by the parasitic light emission of the avalanche which accompanies the photon detection process. We have studied in detail the optical emission of the avalanche photon counting structure in the silicon- and gallium-based photodiodes. Není k dispozici
dcterms:title
Není k dispozici Gallium-based Avalanche Photodiode Optical Crosstalk Gallium-based Avalanche Photodiode Optical Crosstalk
skos:prefLabel
Gallium-based Avalanche Photodiode Optical Crosstalk Není k dispozici Gallium-based Avalanche Photodiode Optical Crosstalk
skos:notation
RIV/68407700:21340/06:04120930!RIV07-MSM-21340___
n3:strany
239;241
n3:aktivita
n15:S n15:Z
n3:aktivity
S, Z(MSM6840770015)
n3:cisloPeriodika
1
n3:dodaniDat
n16:2007
n3:domaciTvurceVysledku
n7:7558538 n7:7395272 n7:7735472 n7:8733384 n7:2716046
n3:druhVysledku
n14:J
n3:duvernostUdaju
n18:S
n3:entitaPredkladatele
n13:predkladatel
n3:idSjednocenehoVysledku
476692
n3:idVysledku
RIV/68407700:21340/06:04120930
n3:jazykVysledku
n11:eng
n3:klicovaSlova
Compound semiconductors; Single photon counting; avalanche photodiode
n3:klicoveSlovo
n4:Compound%20semiconductors n4:Single%20photon%20counting n4:avalanche%20photodiode
n3:kodStatuVydavatele
NL - Nizozemsko
n3:kontrolniKodProRIV
[565672DDCBB8]
n3:nazevZdroje
Nuclear Instruments and Methods in Physics Research, Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
n3:obor
n5:BH
n3:pocetDomacichTvurcuVysledku
5
n3:pocetTvurcuVysledku
5
n3:rokUplatneniVysledku
n16:2006
n3:svazekPeriodika
567
n3:tvurceVysledku
Chren, Dominik Sopko, Bruno Procházka, Ivan Blažej, Josef Hamal, Karel
n3:zamer
n6:MSM6840770015
s:issn
0168-9002
s:numberOfPages
3
n17:organizacniJednotka
21340