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Statements

Subject Item
n2:RIV%2F68407700%3A21340%2F04%3A04105382%21RIV%2F2005%2FMSM%2F213405%2FN
rdf:type
n8:Vysledek skos:Concept
dcterms:description
For the proton irradiation study we used the n-i-p cell deposited on ZnO CVD. The silane concentration was 4.8 %. The solar cell was irradiated through the p-side, with a proton flux passing first through front TCO before reaching the p-layer. The cell was characterized before and after irradiation, and after each of the post-irradiation annealing steps. Three parameters were measured: the open-circuit voltage (Voc), the short-circuit current (Isc), and the fill factor (FF). For the proton irradiation study we used the n-i-p cell deposited on ZnO CVD. The silane concentration was 4.8 %. The solar cell was irradiated through the p-side, with a proton flux passing first through front TCO before reaching the p-layer. The cell was characterized before and after irradiation, and after each of the post-irradiation annealing steps. Three parameters were measured: the open-circuit voltage (Voc), the short-circuit current (Isc), and the fill factor (FF). For the proton irradiation study we used the n-i-p cell deposited on ZnO CVD. The silane concentration was 4.8 %. The solar cell was irradiated through the p-side, with a proton flux passing first through front TCO before reaching the p-layer. The cell was characterized before and after irradiation, and after each of the post-irradiation annealing steps. Three parameters were measured: the open-circuit voltage (Voc), the short-circuit current (Isc), and the fill factor (FF).
dcterms:title
Proton Irradiation and Temperature Annealing of Microcrystalline Silicon Proton Irradiation and Temperature Annealing of Microcrystalline Silicon Proton Irradiation and Temperature Annealing of Microcrystalline Silicon
skos:prefLabel
Proton Irradiation and Temperature Annealing of Microcrystalline Silicon Proton Irradiation and Temperature Annealing of Microcrystalline Silicon Proton Irradiation and Temperature Annealing of Microcrystalline Silicon
skos:notation
RIV/68407700:21340/04:04105382!RIV/2005/MSM/213405/N
n3:strany
17 ; 18
n3:aktivita
n21:Z
n3:aktivity
Z(MSM 210000021)
n3:dodaniDat
n7:2005
n3:domaciTvurceVysledku
n16:4025326
n3:druhVysledku
n12:D
n3:duvernostUdaju
n20:S
n3:entitaPredkladatele
n15:predkladatel
n3:idSjednocenehoVysledku
582914
n3:idVysledku
RIV/68407700:21340/04:04105382
n3:jazykVysledku
n14:eng
n3:klicovaSlova
absorption loss; back reflector; mobility recombination; photoconductivity; roughness
n3:klicoveSlovo
n9:photoconductivity n9:back%20reflector n9:absorption%20loss n9:mobility%20recombination n9:roughness
n3:kontrolniKodProRIV
[0D2F8A583331]
n3:mistoKonaniAkce
Lednice
n3:mistoVydani
Praha
n3:nazevZdroje
The 14th Seminar of Development of Material Science in Research and Education
n3:obor
n6:BM
n3:pocetDomacichTvurcuVysledku
1
n3:pocetTvurcuVysledku
2
n3:rokUplatneniVysledku
n7:2004
n3:tvurceVysledku
Poruba, A. Hoďáková, Lenka
n3:typAkce
n18:EUR
n3:zahajeniAkce
2004-08-30+02:00
n3:zamer
n13:MSM%20210000021
s:numberOfPages
2
n17:hasPublisher
MAXDORF
n19:isbn
80-7345-032-1
n11:organizacniJednotka
21340