This HTML5 document contains 44 embedded RDF statements represented using HTML+Microdata notation.

The embedded RDF content will be recognized by any processor of HTML5 Microdata.

Namespace Prefixes

PrefixIRI
n12http://linked.opendata.cz/ontology/domain/vavai/riv/typAkce/
dctermshttp://purl.org/dc/terms/
n11http://purl.org/net/nknouf/ns/bibtex#
n6http://localhost/temp/predkladatel/
n10http://linked.opendata.cz/resource/domain/vavai/projekt/
n4http://linked.opendata.cz/resource/domain/vavai/riv/tvurce/
n13http://linked.opendata.cz/ontology/domain/vavai/
n17https://schema.org/
shttp://schema.org/
skoshttp://www.w3.org/2004/02/skos/core#
n3http://linked.opendata.cz/ontology/domain/vavai/riv/
n21http://linked.opendata.cz/resource/domain/vavai/vysledek/RIV%2F68407700%3A21230%2F14%3A00219950%21RIV15-MSM-21230___/
n2http://linked.opendata.cz/resource/domain/vavai/vysledek/
rdfhttp://www.w3.org/1999/02/22-rdf-syntax-ns#
n20http://linked.opendata.cz/ontology/domain/vavai/riv/klicoveSlovo/
n8http://linked.opendata.cz/ontology/domain/vavai/riv/duvernostUdaju/
xsdhhttp://www.w3.org/2001/XMLSchema#
n15http://linked.opendata.cz/ontology/domain/vavai/riv/jazykVysledku/
n14http://linked.opendata.cz/ontology/domain/vavai/riv/aktivita/
n19http://linked.opendata.cz/ontology/domain/vavai/riv/obor/
n18http://linked.opendata.cz/ontology/domain/vavai/riv/druhVysledku/
n5http://reference.data.gov.uk/id/gregorian-year/

Statements

Subject Item
n2:RIV%2F68407700%3A21230%2F14%3A00219950%21RIV15-MSM-21230___
rdf:type
n13:Vysledek skos:Concept
dcterms:description
This paper deals with effect of neutron irradiation on static and dynamic characteristics of high voltage 4H-SIC JFET This paper deals with effect of neutron irradiation on static and dynamic characteristics of high voltage 4H-SIC JFET
dcterms:title
Operation of 4H-SiC High Voltage Normally-off V-JFET in Radiation Hard Conditions: Simulation and Experiment Operation of 4H-SiC High Voltage Normally-off V-JFET in Radiation Hard Conditions: Simulation and Experiment
skos:prefLabel
Operation of 4H-SiC High Voltage Normally-off V-JFET in Radiation Hard Conditions: Simulation and Experiment Operation of 4H-SiC High Voltage Normally-off V-JFET in Radiation Hard Conditions: Simulation and Experiment
skos:notation
RIV/68407700:21230/14:00219950!RIV15-MSM-21230___
n3:aktivita
n14:S n14:P
n3:aktivity
P(GAP102/12/2108), S
n3:dodaniDat
n5:2015
n3:domaciTvurceVysledku
n4:7887426 n4:5233321 n4:6368484
n3:druhVysledku
n18:D
n3:duvernostUdaju
n8:S
n3:entitaPredkladatele
n21:predkladatel
n3:idSjednocenehoVysledku
34677
n3:idVysledku
RIV/68407700:21230/14:00219950
n3:jazykVysledku
n15:eng
n3:klicovaSlova
JFET; 4H-SiC; neutrons
n3:klicoveSlovo
n20:JFET n20:neutrons n20:4H-SiC
n3:kontrolniKodProRIV
[697B15349A99]
n3:mistoKonaniAkce
Praha
n3:mistoVydani
Praha
n3:nazevZdroje
ISPS'14 Proceedings
n3:obor
n19:JA
n3:pocetDomacichTvurcuVysledku
3
n3:pocetTvurcuVysledku
3
n3:projekt
n10:GAP102%2F12%2F2108
n3:rokUplatneniVysledku
n5:2014
n3:tvurceVysledku
Popelka, Stanislav Záhlava, Vít Hazdra, Pavel
n3:typAkce
n12:EUR
n3:zahajeniAkce
2014-08-27+02:00
s:numberOfPages
4
n11:hasPublisher
České vysoké učení technické v Praze
n17:isbn
978-80-01-05555-7
n6:organizacniJednotka
21230