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Statements

Subject Item
n2:RIV%2F68407700%3A21230%2F14%3A00213921%21RIV15-MSM-21230___
rdf:type
n8:Vysledek skos:Concept
dcterms:description
The mechanism of grain refinement in Cu-doped Ni–Ti thin films has been investigated by transmission electron microscopy. Sputter-deposited (Ni,Cu)-rich Ni–Ti–Cu thin films exhibited a columnar structure consisting of grains whose lateral size decreased with increasing Cu content. Cu-rich grain boundary segregation was found to become prominent in films containing higher Cu contents. This segregation was attributed to a non-polymorphic crystallization process which lowered the grain growth rate as the Cu content in the films increased. The mechanism of grain refinement in Cu-doped Ni–Ti thin films has been investigated by transmission electron microscopy. Sputter-deposited (Ni,Cu)-rich Ni–Ti–Cu thin films exhibited a columnar structure consisting of grains whose lateral size decreased with increasing Cu content. Cu-rich grain boundary segregation was found to become prominent in films containing higher Cu contents. This segregation was attributed to a non-polymorphic crystallization process which lowered the grain growth rate as the Cu content in the films increased.
dcterms:title
Microstructural investigation on the grain refinement occurring in Cu-doped Ni-Ti thin films Microstructural investigation on the grain refinement occurring in Cu-doped Ni-Ti thin films
skos:prefLabel
Microstructural investigation on the grain refinement occurring in Cu-doped Ni-Ti thin films Microstructural investigation on the grain refinement occurring in Cu-doped Ni-Ti thin films
skos:notation
RIV/68407700:21230/14:00213921!RIV15-MSM-21230___
n3:aktivita
n11:Z
n3:aktivity
Z(MSM6840770038)
n3:cisloPeriodika
April
n3:dodaniDat
n6:2015
n3:domaciTvurceVysledku
n17:8570256
n3:druhVysledku
n14:J
n3:duvernostUdaju
n5:S
n3:entitaPredkladatele
n19:predkladatel
n3:idSjednocenehoVysledku
29242
n3:idVysledku
RIV/68407700:21230/14:00213921
n3:jazykVysledku
n16:eng
n3:klicovaSlova
Shape memory alloys (SMA); Physical vapour deposition (PVD); Grain boundary segregation; Transmission electron microscopy (TEM)
n3:klicoveSlovo
n7:Shape%20memory%20alloys%20%28SMA%29 n7:Grain%20boundary%20segregation n7:Transmission%20electron%20microscopy%20%28TEM%29 n7:Physical%20vapour%20deposition%20%28PVD%29
n3:kodStatuVydavatele
US - Spojené státy americké
n3:kontrolniKodProRIV
[5D293887F3D9]
n3:nazevZdroje
Scripta Materialia
n3:obor
n12:JI
n3:pocetDomacichTvurcuVysledku
1
n3:pocetTvurcuVysledku
3
n3:rokUplatneniVysledku
n6:2014
n3:svazekPeriodika
77
n3:tvurceVysledku
Callisti, M. Polcar, Tomáš Mellor, B. G.
n3:wos
000333717200014
n3:zamer
n18:MSM6840770038
s:issn
1359-6462
s:numberOfPages
4
n15:doi
10.1016/j.scriptamat.2014.01.021
n4:organizacniJednotka
21230