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Statements

Subject Item
n2:RIV%2F68407700%3A21230%2F12%3A00199063%21RIV13-GA0-21230___
rdf:type
n6:Vysledek skos:Concept
dcterms:description
The effect of ion irradiation on electrical characteristics of SiC Schottky barrier power diodes was investigated. Diodes were irradiated from the anode side with 550 keV protons or 1.9 MeV alphas to place radiation defect maximum into the low doped epitaxial layer which formed the N-base of the diode. Radiation defects were then characterized by capacitance deep-level transient spectroscopy and their influence on diode static and dynamic characteristics was evaluated. Results show that low fluences of both proton and alpha particle irradiation have a negligible effect on dynamic and blocking characteristics of SiC power diodes. However, in contrast with silicon devices, the ON-state resistance of SiC diodes increases significantly already at very low fluences. This negative effect is given by high introduction rates of radiation defects in SiC due to the suppressed annihilation of primary damage. The effect of ion irradiation on electrical characteristics of SiC Schottky barrier power diodes was investigated. Diodes were irradiated from the anode side with 550 keV protons or 1.9 MeV alphas to place radiation defect maximum into the low doped epitaxial layer which formed the N-base of the diode. Radiation defects were then characterized by capacitance deep-level transient spectroscopy and their influence on diode static and dynamic characteristics was evaluated. Results show that low fluences of both proton and alpha particle irradiation have a negligible effect on dynamic and blocking characteristics of SiC power diodes. However, in contrast with silicon devices, the ON-state resistance of SiC diodes increases significantly already at very low fluences. This negative effect is given by high introduction rates of radiation defects in SiC due to the suppressed annihilation of primary damage.
dcterms:title
Effect of Ion Irradiation on Electrical Characteristics of 1200V SiC Schottky Diodes Effect of Ion Irradiation on Electrical Characteristics of 1200V SiC Schottky Diodes
skos:prefLabel
Effect of Ion Irradiation on Electrical Characteristics of 1200V SiC Schottky Diodes Effect of Ion Irradiation on Electrical Characteristics of 1200V SiC Schottky Diodes
skos:notation
RIV/68407700:21230/12:00199063!RIV13-GA0-21230___
n6:predkladatel
n7:orjk%3A21230
n3:aktivita
n14:P
n3:aktivity
P(GAP102/12/2108)
n3:dodaniDat
n5:2013
n3:domaciTvurceVysledku
n15:7887426 n15:6368484
n3:druhVysledku
n9:D
n3:duvernostUdaju
n19:S
n3:entitaPredkladatele
n17:predkladatel
n3:idSjednocenehoVysledku
133108
n3:idVysledku
RIV/68407700:21230/12:00199063
n3:jazykVysledku
n10:eng
n3:klicovaSlova
silicon carbide; power diodes; ion irradiation; deep levels
n3:klicoveSlovo
n8:deep%20levels n8:silicon%20carbide n8:ion%20irradiation n8:power%20diodes
n3:kontrolniKodProRIV
[5A7CF69D22C2]
n3:mistoKonaniAkce
Praha
n3:mistoVydani
Praha
n3:nazevZdroje
ISPS'12 PROCEEDINGS
n3:obor
n20:JA
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
5
n3:projekt
n13:GAP102%2F12%2F2108
n3:rokUplatneniVysledku
n5:2012
n3:tvurceVysledku
Záhlava, Vít Berthou, M. Hazdra, Pavel Mihaila, A. Vobecký, Jan
n3:typAkce
n22:EUR
n3:zahajeniAkce
2012-08-28+02:00
s:numberOfPages
6
n18:hasPublisher
České vysoké učení technické v Praze
n12:isbn
978-80-01-05100-9
n21:organizacniJednotka
21230