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Statements

Subject Item
n2:RIV%2F68407700%3A21230%2F11%3A00186836%21RIV12-MSM-21230___
rdf:type
n6:Vysledek skos:Concept
dcterms:description
The article brings upgraded version of a diagnostic system designed for measurements of crystalline silicon solar cell parameters. Shunt resistance, the most affecting deep energy level center and also current-voltage characteristic with its all included parameters are available due to the proposed diagnostic system. New computer program has been created and together with innovated hardware implemented to obtain more accurate, faster and more user-friendly measurements. The diagnostic system was used for investigation of monocrystalline and polycrystalline solar cells. The unlighted samples were measured by a four probe method, exposed to increased temperature and measured again the same way. The article brings upgraded version of a diagnostic system designed for measurements of crystalline silicon solar cell parameters. Shunt resistance, the most affecting deep energy level center and also current-voltage characteristic with its all included parameters are available due to the proposed diagnostic system. New computer program has been created and together with innovated hardware implemented to obtain more accurate, faster and more user-friendly measurements. The diagnostic system was used for investigation of monocrystalline and polycrystalline solar cells. The unlighted samples were measured by a four probe method, exposed to increased temperature and measured again the same way.
dcterms:title
Diagnostic System for Measurement of Crystalline Silicon Solar Cells Diagnostic System for Measurement of Crystalline Silicon Solar Cells
skos:prefLabel
Diagnostic System for Measurement of Crystalline Silicon Solar Cells Diagnostic System for Measurement of Crystalline Silicon Solar Cells
skos:notation
RIV/68407700:21230/11:00186836!RIV12-MSM-21230___
n6:predkladatel
n18:orjk%3A21230
n3:aktivita
n7:S
n3:aktivity
S
n3:dodaniDat
n14:2012
n3:domaciTvurceVysledku
Pikna, Peter n21:5310490
n3:druhVysledku
n20:D
n3:duvernostUdaju
n9:S
n3:entitaPredkladatele
n8:predkladatel
n3:idSjednocenehoVysledku
194211
n3:idVysledku
RIV/68407700:21230/11:00186836
n3:jazykVysledku
n15:eng
n3:klicovaSlova
crystalline silicon; solar cell parameters; deep levels in silicon; shunt resistance; recombination; diagnostic system
n3:klicoveSlovo
n4:crystalline%20silicon n4:diagnostic%20system n4:shunt%20resistance n4:deep%20levels%20in%20silicon n4:solar%20cell%20parameters n4:recombination
n3:kontrolniKodProRIV
[441199AE9004]
n3:mistoKonaniAkce
Prague
n3:mistoVydani
Praha
n3:nazevZdroje
POSTER 2011 - 15th International Student Conference on Electrical Engineering
n3:obor
n17:JE
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
2
n3:rokUplatneniVysledku
n14:2011
n3:tvurceVysledku
Kuřík, Ondřej Pikna, Peter
n3:typAkce
n10:EUR
n3:zahajeniAkce
2011-05-12+02:00
s:numberOfPages
5
n16:hasPublisher
České vysoké učení technické v Praze. Fakulta elektrotechnická
n11:isbn
978-80-01-04806-1
n19:organizacniJednotka
21230