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Namespace Prefixes

PrefixIRI
n23http://linked.opendata.cz/ontology/domain/vavai/riv/typAkce/
dctermshttp://purl.org/dc/terms/
n15http://localhost/temp/predkladatel/
n13http://purl.org/net/nknouf/ns/bibtex#
n11http://linked.opendata.cz/resource/domain/vavai/riv/tvurce/
n17http://linked.opendata.cz/resource/domain/vavai/subjekt/
n14http://linked.opendata.cz/ontology/domain/vavai/
n21https://schema.org/
n5http://linked.opendata.cz/resource/domain/vavai/zamer/
n16http://linked.opendata.cz/resource/domain/vavai/vysledek/RIV%2F68407700%3A21230%2F11%3A00183830%21RIV12-MSM-21230___/
shttp://schema.org/
skoshttp://www.w3.org/2004/02/skos/core#
n3http://linked.opendata.cz/ontology/domain/vavai/riv/
n22http://bibframe.org/vocab/
n2http://linked.opendata.cz/resource/domain/vavai/vysledek/
rdfhttp://www.w3.org/1999/02/22-rdf-syntax-ns#
n4http://linked.opendata.cz/ontology/domain/vavai/riv/klicoveSlovo/
n18http://linked.opendata.cz/ontology/domain/vavai/riv/duvernostUdaju/
xsdhhttp://www.w3.org/2001/XMLSchema#
n20http://linked.opendata.cz/ontology/domain/vavai/riv/aktivita/
n7http://linked.opendata.cz/ontology/domain/vavai/riv/jazykVysledku/
n12http://linked.opendata.cz/ontology/domain/vavai/riv/obor/
n9http://linked.opendata.cz/ontology/domain/vavai/riv/druhVysledku/
n10http://reference.data.gov.uk/id/gregorian-year/

Statements

Subject Item
n2:RIV%2F68407700%3A21230%2F11%3A00183830%21RIV12-MSM-21230___
rdf:type
n14:Vysledek skos:Concept
dcterms:description
Advances in power semiconductor technology have improved the efficiency, size, weight and cost of power electronic systems. At present, IGCTs, IGBTs, and MOSFETs represent modern switching devices. Power integrated circuits (PIC) have been developed for the use of power converters for portable, automotive and aerospace applications. For advanced applications, new materials (SiC and GaN) have been introduced. This paper reviews the state of these devices and elaborates on their potentials in terms of higher voltages, higher power density, and better switching performance. Advances in power semiconductor technology have improved the efficiency, size, weight and cost of power electronic systems. At present, IGCTs, IGBTs, and MOSFETs represent modern switching devices. Power integrated circuits (PIC) have been developed for the use of power converters for portable, automotive and aerospace applications. For advanced applications, new materials (SiC and GaN) have been introduced. This paper reviews the state of these devices and elaborates on their potentials in terms of higher voltages, higher power density, and better switching performance.
dcterms:title
Power Semiconductors - State of Art and Future Trends Power Semiconductors - State of Art and Future Trends
skos:prefLabel
Power Semiconductors - State of Art and Future Trends Power Semiconductors - State of Art and Future Trends
skos:notation
RIV/68407700:21230/11:00183830!RIV12-MSM-21230___
n14:predkladatel
n17:orjk%3A21230
n3:aktivita
n20:Z
n3:aktivity
Z(MSM6840770017)
n3:dodaniDat
n10:2012
n3:domaciTvurceVysledku
n11:2207532
n3:druhVysledku
n9:D
n3:duvernostUdaju
n18:S
n3:entitaPredkladatele
n16:predkladatel
n3:idSjednocenehoVysledku
222206
n3:idVysledku
RIV/68407700:21230/11:00183830
n3:jazykVysledku
n7:eng
n3:klicovaSlova
power semiconductor devices; IGCT; IGBT; power MOSFETs; SJ FETs; SiC devices; GaN devices
n3:klicoveSlovo
n4:power%20semiconductor%20devices n4:power%20MOSFETs n4:GaN%20devices n4:IGBT n4:SiC%20devices n4:IGCT n4:SJ%20FETs
n3:kontrolniKodProRIV
[A64371DD0EA1]
n3:mistoKonaniAkce
Kuching,
n3:mistoVydani
New York
n3:nazevZdroje
Proceedings of the fourth global conference on power control and optimization
n3:obor
n12:JA
n3:pocetDomacichTvurcuVysledku
1
n3:pocetTvurcuVysledku
1
n3:rokUplatneniVysledku
n10:2011
n3:tvurceVysledku
Benda, Vítězslav
n3:typAkce
n23:WRD
n3:wos
000291830300002
n3:zahajeniAkce
2010-12-02+01:00
n3:zamer
n5:MSM6840770017
s:issn
0094-243X
s:numberOfPages
9
n22:doi
10.1063/1.3592437
n13:hasPublisher
American Institute of Physics
n21:isbn
978-0-7354-0893-7
n15:organizacniJednotka
21230