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Statements

Subject Item
n2:RIV%2F68407700%3A21230%2F09%3A00156566%21RIV13-MSM-21230___
rdf:type
skos:Concept n17:Vysledek
rdfs:seeAlso
http://www.ispsd09.com
dcterms:description
Adavnced Reverse Conducting IGBT concept is presented. The device replaces the state-of-the-art two-chip IGBT/Diode approach with a single chip. The overall performance is improved. Adavnced Reverse Conducting IGBT concept is presented. The device replaces the state-of-the-art two-chip IGBT/Diode approach with a single chip. The overall performance is improved.
dcterms:title
The Bi-mode Insulated Gate Transistor (BIGT) A Potential Technology for Higher Power Applications The Bi-mode Insulated Gate Transistor (BIGT) A Potential Technology for Higher Power Applications
skos:prefLabel
The Bi-mode Insulated Gate Transistor (BIGT) A Potential Technology for Higher Power Applications The Bi-mode Insulated Gate Transistor (BIGT) A Potential Technology for Higher Power Applications
skos:notation
RIV/68407700:21230/09:00156566!RIV13-MSM-21230___
n3:aktivita
n14:Z
n3:aktivity
Z(MSM6840770017)
n3:dodaniDat
n13:2013
n3:domaciTvurceVysledku
n10:7091397
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n9:D
n3:duvernostUdaju
n15:S
n3:entitaPredkladatele
n16:predkladatel
n3:idSjednocenehoVysledku
305083
n3:idVysledku
RIV/68407700:21230/09:00156566
n3:jazykVysledku
n4:eng
n3:klicovaSlova
IGBT
n3:klicoveSlovo
n20:IGBT
n3:kontrolniKodProRIV
[BE6733B09668]
n3:mistoKonaniAkce
Barcelona
n3:mistoVydani
Piscataway
n3:nazevZdroje
Proceedings of 21st International Symposium on Power Semiconductor Devices and ICs
n3:obor
n11:JA
n3:pocetDomacichTvurcuVysledku
1
n3:pocetTvurcuVysledku
6
n3:rokUplatneniVysledku
n13:2009
n3:tvurceVysledku
Schnell, S. R. Vobecký, Jan Rahimo, R. M. Schlapbach, S. U. Kopta, K. A. Klaka, K. S.
n3:typAkce
n18:WRD
n3:zahajeniAkce
2009-06-14+02:00
n3:zamer
n19:MSM6840770017
s:issn
1943-653X
s:numberOfPages
4
n22:hasPublisher
IEEE
n21:isbn
978-1-4244-3525-8
n5:organizacniJednotka
21230