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Statements

Subject Item
n2:RIV%2F68407700%3A21230%2F08%3A00143732%21RIV10-MSM-21230___
rdf:type
skos:Concept n13:Vysledek
dcterms:description
The design limits of thin wafer IGBT Technology are discussed. A new buffer concept is presented including a new device called Controlled Punch Through (CPT) IGBT. The design limits of thin wafer IGBT Technology are discussed. A new buffer concept is presented including a new device called Controlled Punch Through (CPT) IGBT.
dcterms:title
Exploring the Silicon Design Limits of Thin Wafer IGBT Technology: The Controlled Punch Through (CPT) IGBT Exploring the Silicon Design Limits of Thin Wafer IGBT Technology: The Controlled Punch Through (CPT) IGBT
skos:prefLabel
Exploring the Silicon Design Limits of Thin Wafer IGBT Technology: The Controlled Punch Through (CPT) IGBT Exploring the Silicon Design Limits of Thin Wafer IGBT Technology: The Controlled Punch Through (CPT) IGBT
skos:notation
RIV/68407700:21230/08:00143732!RIV10-MSM-21230___
n5:aktivita
n11:P
n5:aktivity
P(LC06041)
n5:dodaniDat
n14:2010
n5:domaciTvurceVysledku
n20:7091397
n5:druhVysledku
n9:D
n5:duvernostUdaju
n16:S
n5:entitaPredkladatele
n18:predkladatel
n5:idSjednocenehoVysledku
367381
n5:idVysledku
RIV/68407700:21230/08:00143732
n5:jazykVysledku
n21:eng
n5:klicovaSlova
buffer; igbt; power devices; silicon
n5:klicoveSlovo
n8:silicon n8:igbt n8:power%20devices n8:buffer
n5:kontrolniKodProRIV
[585531D19270]
n5:mistoKonaniAkce
Orlando
n5:mistoVydani
Piscataway
n5:nazevZdroje
Proceedings of the 20th International Symposium on Power Semiconductor Devices & ICs
n5:obor
n17:JA
n5:pocetDomacichTvurcuVysledku
1
n5:pocetTvurcuVysledku
4
n5:projekt
n19:LC06041
n5:rokUplatneniVysledku
n14:2008
n5:tvurceVysledku
Vobecký, Jan
n5:typAkce
n15:WRD
n5:zahajeniAkce
2008-05-18+02:00
s:numberOfPages
4
n10:hasPublisher
IEEE
n7:isbn
978-1-4244-1532-8
n12:organizacniJednotka
21230