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Statements

Subject Item

n2:RIV%2F68407700%3A21230%2F06%3A00126634%21RIV11-GA0-21230___

rdf:type

skos:Concept n21:Vysledek

dcterms:description

The paper described implantation of Er3+/Yb3+ ions into GaN layers. The paper described implantation of Er3+/Yb3+ ions into GaN layers.

dcterms:title

Implantation of Er3+/Yb3+ Ions into GaN Implantation of Er3+/Yb3+ Ions into GaN

skos:prefLabel

Implantation of Er3+/Yb3+ Ions into GaN Implantation of Er3+/Yb3+ Ions into GaN

skos:notation

RIV/68407700:21230/06:00126634!RIV11-GA0-21230___

n4:aktivita

n6:P n6:Z

n4:aktivity

P(GA102/06/0424), Z(MSM6840770014)

n4:dodaniDat

n12:2011

n4:domaciTvurceVysledku

n7:3514641 n7:3520196

n4:druhVysledku

n11:D

n4:duvernostUdaju

n18:S

n4:entitaPredkladatele

n22:predkladatel

n4:idSjednocenehoVysledku

478971

n4:idVysledku

RIV/68407700:21230/06:00126634

n4:jazykVysledku

n10:eng

n4:klicovaSlova

Erbium; GaN; Implantation; Ytterbium

n4:klicoveSlovo

n8:Erbium n8:Implantation n8:GaN n8:Ytterbium

n4:kontrolniKodProRIV

[2FE73F0665C7]

n4:mistoKonaniAkce

Praha

n4:mistoVydani

Athens

n4:nazevZdroje

Proceedings of the WSEAS International Conference: 5th WSEAS Int.Conf. on MICROELECTRONICS, NANOELECTRONICS, OPTOELECTRONICS (MINO'06)

n4:obor

n5:JA

n4:pocetDomacichTvurcuVysledku

2

n4:pocetTvurcuVysledku

10

n4:projekt

n17:GA102%2F06%2F0424

n4:rokUplatneniVysledku

n12:2006

n4:tvurceVysledku

Boldyryeva, H. Buchal, Ch. Oswald, J. Jeřábek, Vítězslav Zavadil, J. Peřina, V. Alves, E. Hüttel, Ivan Špirková, Jarmila Prajzler, Václav

n4:typAkce

n14:CST

n4:zahajeniAkce

2006-03-12+01:00

n4:zamer

n19:MSM6840770014

s:issn

1790-5117

s:numberOfPages

6

n20:hasPublisher

WSEAS Press

n9:isbn

960-8457-42-4

n15:organizacniJednotka

21230