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Statements

Subject Item
n2:RIV%2F68407700%3A21230%2F06%3A00124474%21RIV11-GA0-21230___
rdf:type
skos:Concept n17:Vysledek
dcterms:description
In the article there is presented a new arrangement of a temperature sensor system for air velocity and direction measurement. The system utilizes temperature dependence of the current through the channel of MOS structure. The geometric arrangement of temperature sensors allows measurement of temperature gradient. Temperature gradient allows to compute direction of air flow over the chip. Optimal operating modes of weak and strong inversion of MOS structure operation have been selected for the design of integrated temperature matrix. The matrix has been used for the design of a probe for measurement. Various arrangements of MOS sensor structures have been designed. CoventorWare and CADENCE software tools have been used for simulation and modeling of sensor properties. In the article there is presented a new arrangement of a temperature sensor system for air velocity and direction measurement. The system utilizes temperature dependence of the current through the channel of MOS structure. The geometric arrangement of temperature sensors allows measurement of temperature gradient. Temperature gradient allows to compute direction of air flow over the chip. Optimal operating modes of weak and strong inversion of MOS structure operation have been selected for the design of integrated temperature matrix. The matrix has been used for the design of a probe for measurement. Various arrangements of MOS sensor structures have been designed. CoventorWare and CADENCE software tools have been used for simulation and modeling of sensor properties.
dcterms:title
Strong and Weak Inversion Mode of MOS in the Design of Direction Sensitivity Matrix Strong and Weak Inversion Mode of MOS in the Design of Direction Sensitivity Matrix
skos:prefLabel
Strong and Weak Inversion Mode of MOS in the Design of Direction Sensitivity Matrix Strong and Weak Inversion Mode of MOS in the Design of Direction Sensitivity Matrix
skos:notation
RIV/68407700:21230/06:00124474!RIV11-GA0-21230___
n3:aktivita
n5:P
n3:aktivity
P(GA102/06/1624)
n3:dodaniDat
n13:2011
n3:domaciTvurceVysledku
n8:8532214 n8:7043104 n8:8536112
n3:druhVysledku
n20:D
n3:duvernostUdaju
n11:S
n3:entitaPredkladatele
n16:predkladatel
n3:idSjednocenehoVysledku
501870
n3:idVysledku
RIV/68407700:21230/06:00124474
n3:jazykVysledku
n19:eng
n3:klicovaSlova
MOS; flow; sensors; microsystems
n3:klicoveSlovo
n9:MOS n9:flow n9:sensors n9:microsystems
n3:kontrolniKodProRIV
[F66DE6A36C82]
n3:mistoKonaniAkce
Boston
n3:mistoVydani
Boston
n3:nazevZdroje
NSTI Nanotech 2006 - Technical Proceedings Vol. 1-3. (CDROM)
n3:obor
n15:JA
n3:pocetDomacichTvurcuVysledku
3
n3:pocetTvurcuVysledku
3
n3:projekt
n4:GA102%2F06%2F1624
n3:rokUplatneniVysledku
n13:2006
n3:tvurceVysledku
Bouřa, Adam Jakovenko, Jiří Husák, Miroslav
n3:typAkce
n21:WRD
n3:zahajeniAkce
2006-05-07+02:00
s:numberOfPages
4
n14:hasPublisher
Nano Science and Technology Institute
n6:isbn
0-9767985-9-X
n7:organizacniJednotka
21230