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Statements

Subject Item
n2:RIV%2F68407700%3A21230%2F02%3A03084382%21RIV%2F2003%2FGA0%2F212303%2FN
rdf:type
n6:Vysledek skos:Concept
dcterms:description
The existence of the non-destructive breakdown was observed at some measurements of reverse current-voltage characteristics of individual diodes. However, the study of this phenomenon is very dificult for many in series connected diodes in stack. The existence of the non-destructive breakdown was observed at some measurements of reverse current-voltage characteristics of individual diodes. However, the study of this phenomenon is very dificult for many in series connected diodes in stack.
dcterms:title
Transient Effects on High Voltage Diode Stack under Reverse Bias Transient Effects on High Voltage Diode Stack under Reverse Bias
skos:prefLabel
Transient Effects on High Voltage Diode Stack under Reverse Bias Transient Effects on High Voltage Diode Stack under Reverse Bias
skos:notation
RIV/68407700:21230/02:03084382!RIV/2003/GA0/212303/N
n3:strany
181;187
n3:aktivita
n20:P
n3:aktivity
P(GA102/01/1353)
n3:dodaniDat
n17:2003
n3:domaciTvurceVysledku
n4:9981756
n3:druhVysledku
n11:D
n3:duvernostUdaju
n16:S
n3:entitaPredkladatele
n10:predkladatel
n3:idSjednocenehoVysledku
667271
n3:idVysledku
RIV/68407700:21230/02:03084382
n3:jazykVysledku
n8:eng
n3:klicovaSlova
local breakdown; microplasma; silicon diode
n3:klicoveSlovo
n12:microplasma n12:silicon%20diode n12:local%20breakdown
n3:kontrolniKodProRIV
[037033235E1D]
n3:mistoKonaniAkce
Praha
n3:mistoVydani
Praha
n3:nazevZdroje
Proceedings of the 6th International Seminar on Power Semiconductors
n3:obor
n21:JA
n3:pocetDomacichTvurcuVysledku
1
n3:pocetTvurcuVysledku
4
n3:pocetUcastnikuAkce
0
n3:pocetZahranicnichUcastnikuAkce
0
n3:projekt
n15:GA102%2F01%2F1353
n3:rokUplatneniVysledku
n17:2002
n3:tvurceVysledku
Papež, Václav
n3:typAkce
n18:EUR
n3:zahajeniAkce
2002-06-04+02:00
s:numberOfPages
7
n9:hasPublisher
České vysoké učení technické v Praze. Vydavatelství ČVUT
n19:isbn
80-01-02595-0
n13:organizacniJednotka
21230