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Statements

Subject Item
n2:RIV%2F68407700%3A21220%2F11%3A00181099%21RIV13-MSM-21220___
rdf:type
skos:Concept n12:Vysledek
dcterms:description
They were investigated Si layers (and gradient layer) formed by RF PACVD technology. Si layers are useful and very important intermediate layers before depositing DLC coatings. We reached different Si layers by RF PACVD technology from Hexamethyldisiloxane - HMDSO with various diluted supporting gas (Ar, H2, N2) and we have investigated their properties. To compare the characteristics of layers we prepared gradient film, which contents carbon of CH4. Mechanical behavior of the substrate - coating systems was determined by nanoindentation load - displacement curves. Results show that the diluted gas is remarkable parameter for the properties of the Si intermediate layers. They were investigated Si layers (and gradient layer) formed by RF PACVD technology. Si layers are useful and very important intermediate layers before depositing DLC coatings. We reached different Si layers by RF PACVD technology from Hexamethyldisiloxane - HMDSO with various diluted supporting gas (Ar, H2, N2) and we have investigated their properties. To compare the characteristics of layers we prepared gradient film, which contents carbon of CH4. Mechanical behavior of the substrate - coating systems was determined by nanoindentation load - displacement curves. Results show that the diluted gas is remarkable parameter for the properties of the Si intermediate layers.
dcterms:title
Si and Gradient Layer Formed by RF PACVD Technology Si and Gradient Layer Formed by RF PACVD Technology
skos:prefLabel
Si and Gradient Layer Formed by RF PACVD Technology Si and Gradient Layer Formed by RF PACVD Technology
skos:notation
RIV/68407700:21220/11:00181099!RIV13-MSM-21220___
n12:predkladatel
n13:orjk%3A21220
n4:aktivita
n11:S
n4:aktivity
S
n4:cisloPeriodika
2
n4:dodaniDat
n15:2013
n4:domaciTvurceVysledku
n10:5409101 n10:8382638
n4:druhVysledku
n14:J
n4:duvernostUdaju
n8:S
n4:entitaPredkladatele
n16:predkladatel
n4:idSjednocenehoVysledku
229168
n4:idVysledku
RIV/68407700:21220/11:00181099
n4:jazykVysledku
n17:eng
n4:klicovaSlova
Si layers; RF PACVD; HMDSO; Nanoindentation
n4:klicoveSlovo
n5:Nanoindentation n5:HMDSO n5:Si%20layers n5:RF%20PACVD
n4:kodStatuVydavatele
SK - Slovenská republika
n4:kontrolniKodProRIV
[94283187E753]
n4:nazevZdroje
Výrobné inžinierstvo
n4:obor
n6:BL
n4:pocetDomacichTvurcuVysledku
2
n4:pocetTvurcuVysledku
3
n4:rokUplatneniVysledku
n15:2011
n4:svazekPeriodika
10
n4:tvurceVysledku
Štěpánek, I. Budinská, Zuzana Tischler, Daniel
s:issn
1335-7972
s:numberOfPages
4
n18:organizacniJednotka
21220