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Statements

Subject Item
n2:RIV%2F68407700%3A21110%2F02%3A01078636%21RIV%2F2003%2FGA0%2F211103%2FN
rdf:type
n9:Vysledek skos:Concept
dcterms:description
The need of a simulation of more complicated experiments performed on f.c.c based compound semiconductors call for a model with more active slip systems. Especially, the aim is to obtain the constitutive laws making it possible to describe the plastic behavior of GaAs crystals indented at room temperature. The present paper proposes a model inspired by the generalised constitutive laws for f.c.c. single crystals. The simulation of uniaxial compression tests performed on GaAs single crystals at medium temperatures is presented and the properties of the model are discussed The need of a simulation of more complicated experiments performed on f.c.c based compound semiconductors call for a model with more active slip systems. Especially, the aim is to obtain the constitutive laws making it possible to describe the plastic behavior of GaAs crystals indented at room temperature. The present paper proposes a model inspired by the generalised constitutive laws for f.c.c. single crystals. The simulation of uniaxial compression tests performed on GaAs single crystals at medium temperatures is presented and the properties of the model are discussed
dcterms:title
Modelling of Plastic Behaviour of GaAs - Single Slip and Multislip Modelling of Plastic Behaviour of GaAs - Single Slip and Multislip
skos:prefLabel
Modelling of Plastic Behaviour of GaAs - Single Slip and Multislip Modelling of Plastic Behaviour of GaAs - Single Slip and Multislip
skos:notation
RIV/68407700:21110/02:01078636!RIV/2003/GA0/211103/N
n3:strany
22;23
n3:aktivita
n8:Z n8:P
n3:aktivity
P(GA106/00/1109), Z(MSM 210000021)
n3:dodaniDat
n13:2003
n3:domaciTvurceVysledku
n18:5746167
n3:druhVysledku
n15:D
n3:duvernostUdaju
n21:S
n3:entitaPredkladatele
n20:predkladatel
n3:idSjednocenehoVysledku
653798
n3:idVysledku
RIV/68407700:21110/02:01078636
n3:jazykVysledku
n12:eng
n3:klicovaSlova
semiconductor
n3:klicoveSlovo
n5:semiconductor
n3:kontrolniKodProRIV
[DE16BF2BDEB9]
n3:mistoKonaniAkce
Francheville
n3:mistoVydani
Lyon
n3:nazevZdroje
Abstracts: Colloque Plasticité 2002
n3:obor
n19:BM
n3:pocetDomacichTvurcuVysledku
1
n3:pocetTvurcuVysledku
3
n3:pocetUcastnikuAkce
0
n3:pocetZahranicnichUcastnikuAkce
0
n3:projekt
n16:GA106%2F00%2F1109
n3:rokUplatneniVysledku
n13:2002
n3:tvurceVysledku
Kratochvíl, Jan
n3:typAkce
n11:WRD
n3:zahajeniAkce
2002-05-15+02:00
n3:zamer
n4:MSM%20210000021
s:numberOfPages
2
n7:hasPublisher
INSA de Lyon - URGC Géotechnique
n10:organizacniJednotka
21110