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Statements

Subject Item
n2:RIV%2F68407700%3A21110%2F00%3A01034185%21RIV%2F2004%2FAV0%2F211104%2FN
rdf:type
skos:Concept n18:Vysledek
dcterms:description
An optimum design of experimental setup for the preparation of polycrystalline silicon (pc-Si) films from amorphous layers applicable in the solar cell production is analyzed in the paper An optimum design of experimental setup for the preparation of polycrystalline silicon (pc-Si) films from amorphous layers applicable in the solar cell production is analyzed in the paper
dcterms:title
Modeling the Crystallization of Amorphous Silicon Thin Films Using a High Repetition Rate Scanning Laser Modeling the Crystallization of Amorphous Silicon Thin Films Using a High Repetition Rate Scanning Laser
skos:prefLabel
Modeling the Crystallization of Amorphous Silicon Thin Films Using a High Repetition Rate Scanning Laser Modeling the Crystallization of Amorphous Silicon Thin Films Using a High Repetition Rate Scanning Laser
skos:notation
RIV/68407700:21110/00:01034185!RIV/2004/AV0/211104/N
n3:strany
16 ; 21
n3:aktivita
n15:P
n3:aktivity
P(GA201/97/0217), P(IAA1010719)
n3:cisloPeriodika
2
n3:dodaniDat
n8:2004
n3:domaciTvurceVysledku
n16:2724448 n16:2505738
n3:druhVysledku
n14:J
n3:duvernostUdaju
n11:S
n3:entitaPredkladatele
n6:predkladatel
n3:idSjednocenehoVysledku
717731
n3:idVysledku
RIV/68407700:21110/00:01034185
n3:jazykVysledku
n17:eng
n3:klicovaSlova
crystallization, amorphous silicon, laser
n3:klicoveSlovo
n12:amorphous%20silicon n12:laser n12:crystallization
n3:kodStatuVydavatele
CZ - Česká republika
n3:kontrolniKodProRIV
[9881A34F346A]
n3:nazevZdroje
Acta Polytechnica
n3:obor
n9:JJ
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
2
n3:projekt
n13:IAA1010719 n13:GA201%2F97%2F0217
n3:rokUplatneniVysledku
n8:2000
n3:svazekPeriodika
40
n3:tvurceVysledku
Kalbáč, Adam Černý, Robert
s:issn
1210-2709
s:numberOfPages
6
n7:organizacniJednotka
21110