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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F14%3A00439987%21RIV15-AV0-68378271
rdf:type
n7:Vysledek skos:Concept
dcterms:description
Current-voltage measurements as well as α-particle and photon detection were utilized to an investigation of a novel low work function Mg-metallization in semi-insulating (SI) GaAs. An anomalous decrease of the reverse current has been observed with such contact in comparison with the high work function, Pt Schottky barrier. Possible explanation relates likely to the creation of quasi-degenerate region, containing accumulated electrons, at the Mg/SI-GaAs interface. Current-voltage measurements as well as α-particle and photon detection were utilized to an investigation of a novel low work function Mg-metallization in semi-insulating (SI) GaAs. An anomalous decrease of the reverse current has been observed with such contact in comparison with the high work function, Pt Schottky barrier. Possible explanation relates likely to the creation of quasi-degenerate region, containing accumulated electrons, at the Mg/SI-GaAs interface.
dcterms:title
M/SI-GaAs/M diode: Role of the metal contact in electrical transport, α-particle and photon detection M/SI-GaAs/M diode: Role of the metal contact in electrical transport, α-particle and photon detection
skos:prefLabel
M/SI-GaAs/M diode: Role of the metal contact in electrical transport, α-particle and photon detection M/SI-GaAs/M diode: Role of the metal contact in electrical transport, α-particle and photon detection
skos:notation
RIV/68378271:_____/14:00439987!RIV15-AV0-68378271
n4:aktivita
n13:I
n4:aktivity
I
n4:dodaniDat
n11:2015
n4:domaciTvurceVysledku
n12:4824040 n12:8935688 n12:7422148
n4:druhVysledku
n18:D
n4:duvernostUdaju
n9:S
n4:entitaPredkladatele
n14:predkladatel
n4:idSjednocenehoVysledku
30901
n4:idVysledku
RIV/68378271:_____/14:00439987
n4:jazykVysledku
n15:eng
n4:klicovaSlova
current-voltage measurements; GaAs; radiation detectors
n4:klicoveSlovo
n10:radiation%20detectors n10:current-voltage%20measurements n10:GaAs
n4:kontrolniKodProRIV
[69DA3B064515]
n4:mistoKonaniAkce
Smolenice
n4:mistoVydani
Bratislava
n4:nazevZdroje
ASDAM 2014- Conference Proceedings: The 10th International Conference on Advanced Semiconductor Devices and Microsystems
n4:obor
n16:BM
n4:pocetDomacichTvurcuVysledku
3
n4:pocetTvurcuVysledku
10
n4:rokUplatneniVysledku
n11:2014
n4:tvurceVysledku
Oswald, Jiří Zaťko, B. Kováč, J. Nečas, V. Dubecký, F. Hubík, Pavel Gombia, E. Kindl, Dobroslav Vanko, G. Šagátová, A.
n4:typAkce
n8:WRD
n4:zahajeniAkce
2014-10-20+02:00
s:numberOfPages
4
n19:doi
10.1109/ASDAM.2014.6998643
n20:hasPublisher
Slovenská technická univerzita v Bratislave
n6:isbn
978-1-4799-5474-2