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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F14%3A00436952%21RIV15-GA0-68378271
rdf:type
n10:Vysledek skos:Concept
dcterms:description
In this work, we present an application of NCD layers as backside cooling for AlGaN/GaN heterostructures grown on Si substrates. In this case, diamond nucleation is the most limiting technological step due to low mechanical stability of GaN membranes. We observed that standard nucleation techniques (ultrasonic seeding or bias enhanced nucleation) caused cracking of the membranes or not appropriate nucleation efficiency in the Z-depth of structures. Therefore we implemented PVA polymer consisting of diamond powder as seeding composite which resulted in a successful growth of diamond thin film. In this work, we present an application of NCD layers as backside cooling for AlGaN/GaN heterostructures grown on Si substrates. In this case, diamond nucleation is the most limiting technological step due to low mechanical stability of GaN membranes. We observed that standard nucleation techniques (ultrasonic seeding or bias enhanced nucleation) caused cracking of the membranes or not appropriate nucleation efficiency in the Z-depth of structures. Therefore we implemented PVA polymer consisting of diamond powder as seeding composite which resulted in a successful growth of diamond thin film.
dcterms:title
AlGaN/GaN micromembranes with diamond coating for high electron mobility transistors operated at high temperatures AlGaN/GaN micromembranes with diamond coating for high electron mobility transistors operated at high temperatures
skos:prefLabel
AlGaN/GaN micromembranes with diamond coating for high electron mobility transistors operated at high temperatures AlGaN/GaN micromembranes with diamond coating for high electron mobility transistors operated at high temperatures
skos:notation
RIV/68378271:_____/14:00436952!RIV15-GA0-68378271
n3:aktivita
n4:P n4:I
n3:aktivity
I, P(GP14-16549P)
n3:dodaniDat
n14:2015
n3:domaciTvurceVysledku
Ižák, Tibor n20:6812872
n3:druhVysledku
n12:D
n3:duvernostUdaju
n15:S
n3:entitaPredkladatele
n5:predkladatel
n3:idSjednocenehoVysledku
2141
n3:idVysledku
RIV/68378271:_____/14:00436952
n3:jazykVysledku
n11:eng
n3:klicovaSlova
GaN membranes; diamond films; thermal management; MWCVD; SEM
n3:klicoveSlovo
n6:diamond%20films n6:thermal%20management n6:MWCVD n6:SEM n6:GaN%20membranes
n3:kontrolniKodProRIV
[35B715B6DB9C]
n3:mistoKonaniAkce
Smolenice
n3:mistoVydani
Bratislava
n3:nazevZdroje
ASDAM 2014- Conference Proceedings: The 10th International Conference on Advanced Semiconductor Devices and Microsystems
n3:obor
n13:BM
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
9
n3:projekt
n17:GP14-16549P
n3:rokUplatneniVysledku
n14:2014
n3:tvurceVysledku
Vojs, M. Choleva, P. Potocký, Štěpán Ižák, Tibor Marton, M. Lalinský, T. Rýger, I. Dzuba, J. Vanko, G.
n3:typAkce
n9:WRD
n3:zahajeniAkce
2014-10-20+02:00
s:numberOfPages
4
n18:hasPublisher
Slovenská technická univerzita v Bratislave
n19:isbn
978-1-4799-5474-2