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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F14%3A00432528%21RIV15-GA0-68378271
rdf:type
n16:Vysledek skos:Concept
dcterms:description
Terahertz spectroscopy is employed for the noncontact measurement of transversal mobility in InP nanowires, wherein photonic effects (waveguiding of excitation beam and propagation of terahertz beam in a complex gradient environment) were successfully deconvoluted. Monte Carlo calculations accounting for electron localization and heavy doping were used to determine electron momentum relaxation time corresponding to electron mobility 3000 cm2/V s, which is similar to that in bulk InP. The developed approach paves a way for noncontact determination of charge mobility in advanced semiconductor nanostructures. Terahertz spectroscopy is employed for the noncontact measurement of transversal mobility in InP nanowires, wherein photonic effects (waveguiding of excitation beam and propagation of terahertz beam in a complex gradient environment) were successfully deconvoluted. Monte Carlo calculations accounting for electron localization and heavy doping were used to determine electron momentum relaxation time corresponding to electron mobility 3000 cm2/V s, which is similar to that in bulk InP. The developed approach paves a way for noncontact determination of charge mobility in advanced semiconductor nanostructures.
dcterms:title
Bulk-like transverse electron mobility in an array of heavily n-doped InP nanowires probed by terahertz spectroscopy Bulk-like transverse electron mobility in an array of heavily n-doped InP nanowires probed by terahertz spectroscopy
skos:prefLabel
Bulk-like transverse electron mobility in an array of heavily n-doped InP nanowires probed by terahertz spectroscopy Bulk-like transverse electron mobility in an array of heavily n-doped InP nanowires probed by terahertz spectroscopy
skos:notation
RIV/68378271:_____/14:00432528!RIV15-GA0-68378271
n4:aktivita
n14:P n14:I
n4:aktivity
I, P(GA13-12386S)
n4:cisloPeriodika
8
n4:dodaniDat
n18:2015
n4:domaciTvurceVysledku
n15:6410235
n4:druhVysledku
n11:J
n4:duvernostUdaju
n10:S
n4:entitaPredkladatele
n13:predkladatel
n4:idSjednocenehoVysledku
5946
n4:idVysledku
RIV/68378271:_____/14:00432528
n4:jazykVysledku
n17:eng
n4:klicovaSlova
time-resolved terahertz spectrocopy; semiconductor nanostructures; mobility; effective medium
n4:klicoveSlovo
n12:semiconductor%20nanostructures n12:time-resolved%20terahertz%20spectrocopy n12:effective%20medium n12:mobility
n4:kodStatuVydavatele
US - Spojené státy americké
n4:kontrolniKodProRIV
[801B78802F9E]
n4:nazevZdroje
Physical Review. B
n4:obor
n5:BM
n4:pocetDomacichTvurcuVysledku
1
n4:pocetTvurcuVysledku
10
n4:projekt
n9:GA13-12386S
n4:rokUplatneniVysledku
n18:2014
n4:svazekPeriodika
90
n4:tvurceVysledku
Wallentin, J. Ponseca jr., C. S. Pistol, M.-E. Iqbal, A. Anttu, N. Němec, Hynek Borgström, M. Beech, J. P. Yartsev, A. Samuelson, L.
n4:wos
000341257100005
s:issn
1098-0121
s:numberOfPages
7
n6:doi
10.1103/PhysRevB.90.085405