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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F13%3A00425745%21RIV14-AV0-68378271
rdf:type
skos:Concept n17:Vysledek
dcterms:description
We report on development of 4H-SiC and semi-insulating (SI) GaAs large area surface barrier detectors. Electrical characteristics of the diodes, photocurrent measurements and pulse height spectra of gamma and low energy X-rays are presented. Novel (low work-function) contacts to GaAs are discussed and improvement of 4H-SiC detector resistance to gamma radiation and neutron fluency is demonstrated. We report on development of 4H-SiC and semi-insulating (SI) GaAs large area surface barrier detectors. Electrical characteristics of the diodes, photocurrent measurements and pulse height spectra of gamma and low energy X-rays are presented. Novel (low work-function) contacts to GaAs are discussed and improvement of 4H-SiC detector resistance to gamma radiation and neutron fluency is demonstrated.
dcterms:title
4H-SiC and novel SI GaAs-based M-S-M radiation hard photodetectors applicable in UV, EUV and soft X-ray detection: Design, technology and performance testing 4H-SiC and novel SI GaAs-based M-S-M radiation hard photodetectors applicable in UV, EUV and soft X-ray detection: Design, technology and performance testing
skos:prefLabel
4H-SiC and novel SI GaAs-based M-S-M radiation hard photodetectors applicable in UV, EUV and soft X-ray detection: Design, technology and performance testing 4H-SiC and novel SI GaAs-based M-S-M radiation hard photodetectors applicable in UV, EUV and soft X-ray detection: Design, technology and performance testing
skos:notation
RIV/68378271:_____/13:00425745!RIV14-AV0-68378271
n17:predkladatel
n20:ico%3A68378271
n3:aktivita
n21:I
n3:aktivity
I
n3:dodaniDat
n6:2014
n3:domaciTvurceVysledku
n10:4824040 n10:8935688 n10:7422148
n3:druhVysledku
n7:D
n3:duvernostUdaju
n15:S
n3:entitaPredkladatele
n16:predkladatel
n3:idSjednocenehoVysledku
119859
n3:idVysledku
RIV/68378271:_____/13:00425745
n3:jazykVysledku
n4:eng
n3:klicovaSlova
4H-SiC; EUV; photocurrent spectroscopy; semi-insulating GaAs; UV; X-ray detector
n3:klicoveSlovo
n9:4H-SiC n9:UV n9:photocurrent%20spectroscopy n9:semi-insulating%20GaAs n9:X-ray%20detector n9:EUV
n3:kontrolniKodProRIV
[09983945499A]
n3:mistoKonaniAkce
Praha
n3:mistoVydani
Bellingham
n3:nazevZdroje
Damage to VUV, EUV, and X-ray Optics IV; and EUV and X-ray Optics: Synergy between Laboratory and Space III
n3:obor
n18:BM
n3:pocetDomacichTvurcuVysledku
3
n3:pocetTvurcuVysledku
14
n3:rokUplatneniVysledku
n6:2013
n3:tvurceVysledku
Hubík, Pavel Dubecký, F. Ferrari, C. Zaťko, B. Šagátová, A. Oswald, Jiří Vanko, G. Sekáčová, M. Gombia, E. Kováč, J. Nečas, V. Kindl, Dobroslav Kováč jr., J. Boháček, P.
n3:typAkce
n11:WRD
n3:wos
000329577700043
n3:zahajeniAkce
2013-04-15+02:00
s:numberOfPages
7
n12:doi
10.1117/12.2021729
n19:hasPublisher
SPIE
n14:isbn
9780819495792