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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F13%3A00424792%21RIV14-MSM-68378271
rdf:type
n5:Vysledek skos:Concept
dcterms:description
In this study, Ce:GAGG single crystals were grown by the floating zone (FZ) method under atmospheres of various compositions such as Ar 100%, Ar 80% + O2 20%, Ar 60% + O2 40% and O2 100%. Radioluminescence spectra are dominated by the band at about 540 nm due to Ce3+ 5d1–4f transition. The Ce:GAGG single crystal grown under Ar atmosphere shows an intense slower decay component. It can be related to the processes of the delayed radiative recombination and thermally induced ionization of 5d1 level of Ce3+ center possibly further affected by oxygen vacancies. This slower decay process is significantly suppressed in the samples grown under the O2 containing atmosphere. In this study, Ce:GAGG single crystals were grown by the floating zone (FZ) method under atmospheres of various compositions such as Ar 100%, Ar 80% + O2 20%, Ar 60% + O2 40% and O2 100%. Radioluminescence spectra are dominated by the band at about 540 nm due to Ce3+ 5d1–4f transition. The Ce:GAGG single crystal grown under Ar atmosphere shows an intense slower decay component. It can be related to the processes of the delayed radiative recombination and thermally induced ionization of 5d1 level of Ce3+ center possibly further affected by oxygen vacancies. This slower decay process is significantly suppressed in the samples grown under the O2 containing atmosphere.
dcterms:title
Crystal growth and characterization of Ce:Gd3(Ga,Al)5O12 single crystal using floating zone method in different O2 partial pressure Crystal growth and characterization of Ce:Gd3(Ga,Al)5O12 single crystal using floating zone method in different O2 partial pressure
skos:prefLabel
Crystal growth and characterization of Ce:Gd3(Ga,Al)5O12 single crystal using floating zone method in different O2 partial pressure Crystal growth and characterization of Ce:Gd3(Ga,Al)5O12 single crystal using floating zone method in different O2 partial pressure
skos:notation
RIV/68378271:_____/13:00424792!RIV14-MSM-68378271
n5:predkladatel
n16:ico%3A68378271
n3:aktivita
n17:P n17:I
n3:aktivity
I, P(LH12150)
n3:cisloPeriodika
11
n3:dodaniDat
n14:2014
n3:domaciTvurceVysledku
n7:7547544 n7:1021508
n3:druhVysledku
n19:J
n3:duvernostUdaju
n12:S
n3:entitaPredkladatele
n18:predkladatel
n3:idSjednocenehoVysledku
67388
n3:idVysledku
RIV/68378271:_____/13:00424792
n3:jazykVysledku
n9:eng
n3:klicovaSlova
Ce:GAGG; scintillator; single crystal; floating zone method; growth atmosphere; combinatorial
n3:klicoveSlovo
n4:scintillator n4:floating%20zone%20method n4:growth%20atmosphere n4:Ce%3AGAGG n4:single%20crystal n4:combinatorial
n3:kodStatuVydavatele
NL - Nizozemsko
n3:kontrolniKodProRIV
[364723CA83F5]
n3:nazevZdroje
Optical Materials
n3:obor
n13:BM
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
13
n3:projekt
n10:LH12150
n3:rokUplatneniVysledku
n14:2013
n3:svazekPeriodika
35
n3:tvurceVysledku
Sugiyama, M. Fujimoto, Y. Shishido, T. Yamaji, A. Wakahara, S. Pejchal, Jan Futami, Y. Kamada, K. Yubuta, K. Yoshikawa, A. Yokota, Y. Nikl, Martin Kurosawa, S.
n3:wos
000324962500003
s:issn
0925-3467
s:numberOfPages
5
n15:doi
10.1016/j.optmat.2013.02.021