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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F13%3A00424328%21RIV14-AV0-68378271
rdf:type
n14:Vysledek skos:Concept
dcterms:description
This work deals with design, technology and characterization of high temperature stable AlGaN/GaN based high electron mobility transistors (HEMTs) able to work in harsh environments. The originality of the concept proposal consists in research of new (a) progressive thin layers based on metal oxides and/or their combinations for Schottky gate electrodes, (b) metal stacks with improved surface morphology for ohmic contacts with low specific contact resistivity values and (c) possibilities of hybrid integration of the piezoelectric AlGaN/GaN material system with diamond layers in order to improve the heat dissipation in the channel of the HEMTs. This work deals with design, technology and characterization of high temperature stable AlGaN/GaN based high electron mobility transistors (HEMTs) able to work in harsh environments. The originality of the concept proposal consists in research of new (a) progressive thin layers based on metal oxides and/or their combinations for Schottky gate electrodes, (b) metal stacks with improved surface morphology for ohmic contacts with low specific contact resistivity values and (c) possibilities of hybrid integration of the piezoelectric AlGaN/GaN material system with diamond layers in order to improve the heat dissipation in the channel of the HEMTs.
dcterms:title
AlGaN/GaN high electron mobility transistors for high temperatures AlGaN/GaN high electron mobility transistors for high temperatures
skos:prefLabel
AlGaN/GaN high electron mobility transistors for high temperatures AlGaN/GaN high electron mobility transistors for high temperatures
skos:notation
RIV/68378271:_____/13:00424328!RIV14-AV0-68378271
n14:predkladatel
n16:ico%3A68378271
n3:aktivita
n13:I
n3:aktivity
I
n3:dodaniDat
n8:2014
n3:domaciTvurceVysledku
n19:7465416 Ižák, Tibor
n3:druhVysledku
n12:D
n3:duvernostUdaju
n20:S
n3:entitaPredkladatele
n17:predkladatel
n3:idSjednocenehoVysledku
60050
n3:idVysledku
RIV/68378271:_____/13:00424328
n3:jazykVysledku
n9:eng
n3:klicovaSlova
electron mobility; crystalline diamond substrates; GaN
n3:klicoveSlovo
n7:GaN n7:crystalline%20diamond%20substrates n7:electron%20mobility
n3:kontrolniKodProRIV
[9AE4D52CFA06]
n3:mistoKonaniAkce
Štrbské Pleso
n3:mistoVydani
Bratislava
n3:nazevZdroje
Perspektívne vákuové metódy a technológie (Perspective vacuum methods and technologies)
n3:obor
n4:JA
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
10
n3:rokUplatneniVysledku
n8:2013
n3:tvurceVysledku
Vojs, M. Vincze, A. Dobročka, E. Ižák, Tibor Lalinský, T. Vanko, G. Vallo, M. Dzuba, J. Rýger, I. Kromka, Alexander
n3:typAkce
n15:EUR
n3:zahajeniAkce
2013-10-10+02:00
s:numberOfPages
5
n18:hasPublisher
Slovenská vákuová spoločnosť
n10:isbn
978-80-971179-2-4