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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F13%3A00399884%21RIV14-MSM-68378271
rdf:type
skos:Concept n18:Vysledek
dcterms:description
In the recent years, there was a growing interest for electronic devices operating in very harsh environments, at elevated temperatures, high power, high frequency, and high radiation fields.1,2 In that context, silicon carbide (SiC) is one of the most promising wide band gap materials for these devices due to its high breakdown electric field, high electron saturation velocity, high operating temperature, and high radiation hardness properties. In the recent years, there was a growing interest for electronic devices operating in very harsh environments, at elevated temperatures, high power, high frequency, and high radiation fields.1,2 In that context, silicon carbide (SiC) is one of the most promising wide band gap materials for these devices due to its high breakdown electric field, high electron saturation velocity, high operating temperature, and high radiation hardness properties.
dcterms:title
High performance SiC detectors for MeV ion beamsgenerated by intense pulsed laser plasmas High performance SiC detectors for MeV ion beamsgenerated by intense pulsed laser plasmas
skos:prefLabel
High performance SiC detectors for MeV ion beamsgenerated by intense pulsed laser plasmas High performance SiC detectors for MeV ion beamsgenerated by intense pulsed laser plasmas
skos:notation
RIV/68378271:_____/13:00399884!RIV14-MSM-68378271
n18:predkladatel
n19:ico%3A68378271
n3:aktivita
n14:P n14:I
n3:aktivity
I, P(ED1.1.00/02.0061), P(EE.2.3.20.0087)
n3:cisloPeriodika
1
n3:dodaniDat
n13:2014
n3:domaciTvurceVysledku
n11:3853942 Margarone, Daniele
n3:druhVysledku
n16:J
n3:duvernostUdaju
n17:S
n3:entitaPredkladatele
n15:predkladatel
n3:idSjednocenehoVysledku
77349
n3:idVysledku
RIV/68378271:_____/13:00399884
n3:jazykVysledku
n4:eng
n3:klicovaSlova
silicon carbide; ion detectors; high power laser
n3:klicoveSlovo
n6:silicon%20carbide n6:ion%20detectors n6:high%20power%20laser
n3:kodStatuVydavatele
US - Spojené státy americké
n3:kontrolniKodProRIV
[ABFF30C7B24D]
n3:nazevZdroje
Journal of Materials Research
n3:obor
n8:BL
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
9
n3:projekt
n10:EE.2.3.20.0087 n10:ED1.1.00%2F02.0061
n3:rokUplatneniVysledku
n13:2013
n3:svazekPeriodika
28
n3:tvurceVysledku
Cutroneo, M. Ullschmied, Jiří Calcagno, L. Torrisi, L. Velyhan, Andriy La Via, F. Zimbone, M. Margarone, Daniele Musumeci, P.
n3:wos
000313589600013
s:issn
0884-2914
s:numberOfPages
7
n12:doi
10.1557/jmr.2012.211