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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F13%3A00398548%21RIV14-GA0-68378271
rdf:type
skos:Concept n16:Vysledek
dcterms:description
ZnO thin films deposited on various substrates were characterized by slow positron implantation spectroscopy (SPIS) combined with X-ray diffraction (XRD). All films studied exhibit wurtzite structure and crystallite size 20-100 nm. The mosaic spread of crystallites is relatively small for the films grown on single crystalline substrates while it is substantial for the film grown on amorphous substrate. SPIS investigations revealed that ZnO films deposited on single crystalline substrates exhibit significantly higher density of defects than the film deposited on amorphous substrate. This is most probably due to a higher density of misfit dislocations, which compensate for the lattice mismatch between the film and the substrate. ZnO thin films deposited on various substrates were characterized by slow positron implantation spectroscopy (SPIS) combined with X-ray diffraction (XRD). All films studied exhibit wurtzite structure and crystallite size 20-100 nm. The mosaic spread of crystallites is relatively small for the films grown on single crystalline substrates while it is substantial for the film grown on amorphous substrate. SPIS investigations revealed that ZnO films deposited on single crystalline substrates exhibit significantly higher density of defects than the film deposited on amorphous substrate. This is most probably due to a higher density of misfit dislocations, which compensate for the lattice mismatch between the film and the substrate.
dcterms:title
Defect studies of ZnO films prepared by pulsed laser deposition on various substrates Defect studies of ZnO films prepared by pulsed laser deposition on various substrates
skos:prefLabel
Defect studies of ZnO films prepared by pulsed laser deposition on various substrates Defect studies of ZnO films prepared by pulsed laser deposition on various substrates
skos:notation
RIV/68378271:_____/13:00398548!RIV14-GA0-68378271
n16:predkladatel
n17:ico%3A68378271
n3:aktivita
n5:P n5:I
n3:aktivity
I, P(GAP108/11/0958)
n3:dodaniDat
n18:2014
n3:domaciTvurceVysledku
n10:9640495 n10:7433514 n10:7772629
n3:druhVysledku
n21:D
n3:duvernostUdaju
n14:S
n3:entitaPredkladatele
n6:predkladatel
n3:idSjednocenehoVysledku
68144
n3:idVysledku
RIV/68378271:_____/13:00398548
n3:jazykVysledku
n20:eng
n3:klicovaSlova
ZnO thin film; pulsed laser deposition; point defects; slow positron implantation spectroscopy; x-ray diffraction
n3:klicoveSlovo
n7:slow%20positron%20implantation%20spectroscopy n7:ZnO%20thin%20film n7:x-ray%20diffraction n7:point%20defects n7:pulsed%20laser%20deposition
n3:kontrolniKodProRIV
[02FBCC892E2F]
n3:mistoKonaniAkce
Bristol
n3:mistoVydani
Bristol
n3:nazevZdroje
ICPA 2012 - 16th International Conference on Positron Annihilation
n3:obor
n11:BM
n3:pocetDomacichTvurcuVysledku
3
n3:pocetTvurcuVysledku
13
n3:projekt
n9:GAP108%2F11%2F0958
n3:rokUplatneniVysledku
n18:2013
n3:tvurceVysledku
Mosnier, J.-P. Procházka, I. Krishnamurthy, S. Kužel, R. Novotný, Michal Lančok, Ján Brauer, G. Connolly, J. Melikhova, O. McCarthy, E. Bulíř, Jiří Anwand, W. Čížek, J.
n3:typAkce
n19:WRD
n3:wos
000321739400018
n3:zahajeniAkce
2012-08-19+02:00
s:issn
1742-6588
s:numberOfPages
4
n8:doi
10.1088/1742-6596/443/1/012018
n15:hasPublisher
IOP Publishing Ltd