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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F13%3A00396607%21RIV14-GA0-68378271
rdf:type
n11:Vysledek skos:Concept
rdfs:seeAlso
http://apl.aip.org/resource/1/applab/v103/i9/p091601_s1?isAuthorized=no
dcterms:description
A nondestructive approach to determine the wurtzite GaN crystal polarity based on X-ray photoelectron diffraction is proposed. The approach, utilizing the ratio of photoemitted electron currents excited by a standard laboratory X-ray source from the N 1s level in the (10 -10) plane at polar angles of 20 and 25 , is tested on GaN crystals. The photoelectron intensity ratio I20/I25 is larger or smaller than unity for GaN(0001) or GaN(000 -1), respectively. The approach can be used for polarity determination of other binary wurtzite crystals. The atom with the smaller electron scattering cross-section should be used as the emitter. A nondestructive approach to determine the wurtzite GaN crystal polarity based on X-ray photoelectron diffraction is proposed. The approach, utilizing the ratio of photoemitted electron currents excited by a standard laboratory X-ray source from the N 1s level in the (10 -10) plane at polar angles of 20 and 25 , is tested on GaN crystals. The photoelectron intensity ratio I20/I25 is larger or smaller than unity for GaN(0001) or GaN(000 -1), respectively. The approach can be used for polarity determination of other binary wurtzite crystals. The atom with the smaller electron scattering cross-section should be used as the emitter.
dcterms:title
GaN polarity determination by photoelectron diffraction GaN polarity determination by photoelectron diffraction
skos:prefLabel
GaN polarity determination by photoelectron diffraction GaN polarity determination by photoelectron diffraction
skos:notation
RIV/68378271:_____/13:00396607!RIV14-GA0-68378271
n11:predkladatel
n12:ico%3A68378271
n3:aktivita
n19:P n19:I
n3:aktivity
I, P(GBP108/12/G108)
n3:cisloPeriodika
9
n3:dodaniDat
n4:2014
n3:domaciTvurceVysledku
n9:3420868 Romanyuk, Olexandr n9:2163462 Bieloshapka, Igor
n3:druhVysledku
n20:J
n3:duvernostUdaju
n6:S
n3:entitaPredkladatele
n10:predkladatel
n3:idSjednocenehoVysledku
76168
n3:idVysledku
RIV/68378271:_____/13:00396607
n3:jazykVysledku
n16:eng
n3:klicovaSlova
GaN; photoelectron diffraction; wurtzite; surface polarity
n3:klicoveSlovo
n5:wurtzite n5:surface%20polarity n5:photoelectron%20diffraction n5:GaN
n3:kodStatuVydavatele
US - Spojené státy americké
n3:kontrolniKodProRIV
[2266BB192826]
n3:nazevZdroje
Applied Physics Letters
n3:obor
n13:BM
n3:pocetDomacichTvurcuVysledku
4
n3:pocetTvurcuVysledku
5
n3:projekt
n7:GBP108%2F12%2FG108
n3:rokUplatneniVysledku
n4:2013
n3:svazekPeriodika
103
n3:tvurceVysledku
Bieloshapka, Igor Jiříček, Petr Romanyuk, Olexandr Paskova, T. Bartoš, Igor
n3:wos
000323846900015
s:issn
0003-6951
s:numberOfPages
4
n18:doi
10.1063/1.4819761