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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F13%3A00396559%21RIV14-GA0-68378271
rdf:type
n5:Vysledek skos:Concept
dcterms:description
Single crystalline films of Lu2SiO5:Bi,prepared by the liquid phase epitaxy method from the melt-solution based on Bi2O3 flux, are studied at 4.2–350 K by the time-resolved spectroscopy methods under excitation in the 2.4–6.2 eV energy range. An intense dominant ultraviolet luminescence of Lu2SiO5:Bi is shown to arise from the radiative decay of the metastable and radiative minima of the triplet relaxed excited state(RES)of Bi3+ centers which are related to the 3P0 and 3P1 levels of a free Bi3+ ion,respectively. Characteristic parameters of the triplet RES,in particular the energy separation between the excited states and the rates of the radiative and non-radiative transitions from these states, are determined. Single crystalline films of Lu2SiO5:Bi,prepared by the liquid phase epitaxy method from the melt-solution based on Bi2O3 flux, are studied at 4.2–350 K by the time-resolved spectroscopy methods under excitation in the 2.4–6.2 eV energy range. An intense dominant ultraviolet luminescence of Lu2SiO5:Bi is shown to arise from the radiative decay of the metastable and radiative minima of the triplet relaxed excited state(RES)of Bi3+ centers which are related to the 3P0 and 3P1 levels of a free Bi3+ ion,respectively. Characteristic parameters of the triplet RES,in particular the energy separation between the excited states and the rates of the radiative and non-radiative transitions from these states, are determined.
dcterms:title
Photoluminescence and excited state structure of Bi3+-related centers in Lu2SiO5:Bi single crystalline films Photoluminescence and excited state structure of Bi3+-related centers in Lu2SiO5:Bi single crystalline films
skos:prefLabel
Photoluminescence and excited state structure of Bi3+-related centers in Lu2SiO5:Bi single crystalline films Photoluminescence and excited state structure of Bi3+-related centers in Lu2SiO5:Bi single crystalline films
skos:notation
RIV/68378271:_____/13:00396559!RIV14-GA0-68378271
n5:predkladatel
n13:ico%3A68378271
n3:aktivita
n19:I n19:P
n3:aktivity
I, P(GAP204/12/0805)
n3:cisloPeriodika
Feb
n3:dodaniDat
n4:2014
n3:domaciTvurceVysledku
n8:3941450 n8:1021508
n3:druhVysledku
n18:J
n3:duvernostUdaju
n16:S
n3:entitaPredkladatele
n17:predkladatel
n3:idSjednocenehoVysledku
96102
n3:idVysledku
RIV/68378271:_____/13:00396559
n3:jazykVysledku
n6:eng
n3:klicovaSlova
Bi3+-doped oxyorthosilicate; time-resolved spectroscopy; luminescence; scintillation materials
n3:klicoveSlovo
n12:luminescence n12:Bi3%2B-doped%20oxyorthosilicate n12:time-resolved%20spectroscopy n12:scintillation%20materials
n3:kodStatuVydavatele
NL - Nizozemsko
n3:kontrolniKodProRIV
[4C04EA4C7317]
n3:nazevZdroje
Journal of Luminescence
n3:obor
n15:BM
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
6
n3:projekt
n11:GAP204%2F12%2F0805
n3:rokUplatneniVysledku
n4:2013
n3:svazekPeriodika
134
n3:tvurceVysledku
Zorenko, Y. Gorbenko, V. Zazubovich, S. Mihóková, Eva Krasnikov, A. Nikl, Martin
n3:wos
000313393300076
s:issn
0022-2313
s:numberOfPages
8
n9:doi
10.1016/j.jlumin.2012.07.043