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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F13%3A00396533%21RIV14-GA0-68378271
rdf:type
n8:Vysledek skos:Concept
dcterms:description
Single crystallinefilms of Bi-doped Y2SiO5 are studied at 4.2-350 K by the time-resolved luminescence methods under excitation in the 3.8-6.2 eV energy range. Ultraviolet luminescence of Y2SiO5:Bi (3.6 eV) is shown to arise from the radiative decay of the metastable and radiative minima of the triplet relaxed excited state (RES) of Bi3+ centers which are related to the 3P0 and 3P1 levels of a free Bi3+ ion, respectively. The lowest-energy excitation band of this emission, located at 4.5 eV, is assigned to the 1S0 3P1 transitions of a free Bi3+ ion. The phenomenological model is proposed to describe the excitedstate dynamics of Bi3+ centers in Y2SiO5:Bi, and parameters of the triplet RES are determined. Single crystallinefilms of Bi-doped Y2SiO5 are studied at 4.2-350 K by the time-resolved luminescence methods under excitation in the 3.8-6.2 eV energy range. Ultraviolet luminescence of Y2SiO5:Bi (3.6 eV) is shown to arise from the radiative decay of the metastable and radiative minima of the triplet relaxed excited state (RES) of Bi3+ centers which are related to the 3P0 and 3P1 levels of a free Bi3+ ion, respectively. The lowest-energy excitation band of this emission, located at 4.5 eV, is assigned to the 1S0 3P1 transitions of a free Bi3+ ion. The phenomenological model is proposed to describe the excitedstate dynamics of Bi3+ centers in Y2SiO5:Bi, and parameters of the triplet RES are determined.
dcterms:title
Photoluminescence and excited state structure in Bi3+-doped Y2SiO5 single crystalline films Photoluminescence and excited state structure in Bi3+-doped Y2SiO5 single crystalline films
skos:prefLabel
Photoluminescence and excited state structure in Bi3+-doped Y2SiO5 single crystalline films Photoluminescence and excited state structure in Bi3+-doped Y2SiO5 single crystalline films
skos:notation
RIV/68378271:_____/13:00396533!RIV14-GA0-68378271
n8:predkladatel
n18:ico%3A68378271
n3:aktivita
n13:P n13:I
n3:aktivity
I, P(GAP204/12/0805)
n3:cisloPeriodika
Sept
n3:dodaniDat
n11:2014
n3:domaciTvurceVysledku
Babin, Vladimir n12:3941450 n12:1021508
n3:druhVysledku
n14:J
n3:duvernostUdaju
n15:S
n3:entitaPredkladatele
n16:predkladatel
n3:idSjednocenehoVysledku
96101
n3:idVysledku
RIV/68378271:_____/13:00396533
n3:jazykVysledku
n6:eng
n3:klicovaSlova
luminescence; Bi3+-doped oxyorthosilicates; single crystalline films
n3:klicoveSlovo
n10:single%20crystalline%20films n10:luminescence n10:Bi3%2B-doped%20oxyorthosilicates
n3:kodStatuVydavatele
GB - Spojené království Velké Británie a Severního Irska
n3:kontrolniKodProRIV
[45595B468579]
n3:nazevZdroje
Radiation Measurements
n3:obor
n19:BH
n3:pocetDomacichTvurcuVysledku
3
n3:pocetTvurcuVysledku
7
n3:projekt
n4:GAP204%2F12%2F0805
n3:rokUplatneniVysledku
n11:2013
n3:svazekPeriodika
56
n3:tvurceVysledku
Krasnikov, A. Gorbenko, V. Babin, Vladimir Mihóková, Eva Zazubovich, S. Zorenko, Y. Nikl, Martin
n3:wos
000325671400021
s:issn
1350-4487
s:numberOfPages
4
n17:doi
10.1016/j.radmeas.2013.04.001