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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F13%3A00396370%21RIV14-GA0-68378271
rdf:type
skos:Concept n14:Vysledek
dcterms:description
Luminescence properties of MOVPE grown LEDs with active InAs/GaAs QD layer covered by GaAsSb SRL were investigated at temperatures from 10 to 400 K. Results show that the use of GaAsSb SRL with up to 14% Sb strongly increases luminescence, redshifts the emission maximum up to 1.4 μm while keeping the type I transition, narrows the luminescence linewidth and keeps the separation energy between the ground and excited state as in InAs/GaAs QD LEDs without SRL. The ground state electroluminescence shows the typical Stranski-Krastanov dot temperature properties. The electroluminescence intensity of the ground and excited state transitions increases with temperature (up to 80 K) due to the thermal escape of electrons from the wetting layer which reduces radiative recombination via wetting layer states. The dominant mechanism responsible for the thermal quenching of electroluminescence at elevated temperatures is the escape of electrons from QDs to the GaAs barrier. Luminescence properties of MOVPE grown LEDs with active InAs/GaAs QD layer covered by GaAsSb SRL were investigated at temperatures from 10 to 400 K. Results show that the use of GaAsSb SRL with up to 14% Sb strongly increases luminescence, redshifts the emission maximum up to 1.4 μm while keeping the type I transition, narrows the luminescence linewidth and keeps the separation energy between the ground and excited state as in InAs/GaAs QD LEDs without SRL. The ground state electroluminescence shows the typical Stranski-Krastanov dot temperature properties. The electroluminescence intensity of the ground and excited state transitions increases with temperature (up to 80 K) due to the thermal escape of electrons from the wetting layer which reduces radiative recombination via wetting layer states. The dominant mechanism responsible for the thermal quenching of electroluminescence at elevated temperatures is the escape of electrons from QDs to the GaAs barrier.
dcterms:title
Light emitting diodes with InAs/GaAsSb self-assembled quantum dot layer embedded in GaAs Light emitting diodes with InAs/GaAsSb self-assembled quantum dot layer embedded in GaAs
skos:prefLabel
Light emitting diodes with InAs/GaAsSb self-assembled quantum dot layer embedded in GaAs Light emitting diodes with InAs/GaAsSb self-assembled quantum dot layer embedded in GaAs
skos:notation
RIV/68378271:_____/13:00396370!RIV14-GA0-68378271
n14:predkladatel
n20:ico%3A68378271
n4:aktivita
n9:P n9:Z
n4:aktivity
P(GA202/09/0676), P(GAP102/10/1201), Z(AV0Z10100521)
n4:cisloPeriodika
Sept
n4:dodaniDat
n18:2014
n4:domaciTvurceVysledku
n15:6156142 n15:4824040 n15:7895585 n15:7369123
n4:druhVysledku
n13:J
n4:duvernostUdaju
n19:S
n4:entitaPredkladatele
n6:predkladatel
n4:idSjednocenehoVysledku
84931
n4:idVysledku
RIV/68378271:_____/13:00396370
n4:jazykVysledku
n12:eng
n4:klicovaSlova
quantum dots; electroluminescence; metalorganic vapor phase epitaxy; InAs; GaAsSb; light emitting diodes
n4:klicoveSlovo
n5:light%20emitting%20diodes n5:GaAsSb n5:quantum%20dots n5:metalorganic%20vapor%20phase%20epitaxy n5:electroluminescence n5:InAs
n4:kodStatuVydavatele
CH - Švýcarská konfederace
n4:kontrolniKodProRIV
[CDFB7150EB49]
n4:nazevZdroje
Thin Solid Films
n4:obor
n17:BM
n4:pocetDomacichTvurcuVysledku
4
n4:pocetTvurcuVysledku
5
n4:projekt
n16:GAP102%2F10%2F1201 n16:GA202%2F09%2F0676
n4:rokUplatneniVysledku
n18:2013
n4:svazekPeriodika
543
n4:tvurceVysledku
Pangrác, Jiří Oswald, Jiří Hazdra, P. Hospodková, Alice Hulicius, Eduard
n4:wos
000324049500020
n4:zamer
n8:AV0Z10100521
s:issn
0040-6090
s:numberOfPages
5
n11:doi
10.1016/j.tsf.2013.02.116