This HTML5 document contains 52 embedded RDF statements represented using HTML+Microdata notation.

The embedded RDF content will be recognized by any processor of HTML5 Microdata.

Namespace Prefixes

PrefixIRI
dctermshttp://purl.org/dc/terms/
n10http://linked.opendata.cz/resource/domain/vavai/projekt/
n4http://linked.opendata.cz/resource/domain/vavai/riv/tvurce/
n18http://linked.opendata.cz/resource/domain/vavai/subjekt/
n14http://linked.opendata.cz/ontology/domain/vavai/
shttp://schema.org/
skoshttp://www.w3.org/2004/02/skos/core#
n3http://linked.opendata.cz/ontology/domain/vavai/riv/
n16http://bibframe.org/vocab/
n19http://linked.opendata.cz/resource/domain/vavai/vysledek/RIV%2F68378271%3A_____%2F13%3A00396224%21RIV14-GA0-68378271/
n2http://linked.opendata.cz/resource/domain/vavai/vysledek/
rdfhttp://www.w3.org/1999/02/22-rdf-syntax-ns#
n6http://linked.opendata.cz/ontology/domain/vavai/riv/klicoveSlovo/
n9http://linked.opendata.cz/ontology/domain/vavai/riv/duvernostUdaju/
xsdhhttp://www.w3.org/2001/XMLSchema#
n17http://linked.opendata.cz/ontology/domain/vavai/riv/jazykVysledku/
n13http://linked.opendata.cz/ontology/domain/vavai/riv/aktivita/
n15http://linked.opendata.cz/ontology/domain/vavai/riv/druhVysledku/
n8http://linked.opendata.cz/ontology/domain/vavai/riv/obor/
n11http://reference.data.gov.uk/id/gregorian-year/

Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F13%3A00396224%21RIV14-GA0-68378271
rdf:type
skos:Concept n14:Vysledek
dcterms:description
TiO2 filmswere deposited by reactive direct currentmagnetron sputtering on conductive and semiconductive Si as well as on dielectric quartz substrates at different negative substrate biases generated by radio-frequency (RF) power applied to the substrate holder. The mechanical properties of the films (depth sensing indentation) were examined in dependence on the film structure (X-ray diffraction and Raman spectroscopy). Phase analysis and hardness data imply that RF induced self-bias on the upper surface of quartz substrate is smaller in comparison to that on the surface of the semiconductive and especially conductive Si substrate. The rutile phase still grows after the RF power is switched off. The rutile grain size increaseswhile hardness decreases in this case. Micro-Raman spectroscopy of residual indents in the films with anatase structure points out on the more dense high pressure TiO2-II structure formed during the indentation. TiO2 filmswere deposited by reactive direct currentmagnetron sputtering on conductive and semiconductive Si as well as on dielectric quartz substrates at different negative substrate biases generated by radio-frequency (RF) power applied to the substrate holder. The mechanical properties of the films (depth sensing indentation) were examined in dependence on the film structure (X-ray diffraction and Raman spectroscopy). Phase analysis and hardness data imply that RF induced self-bias on the upper surface of quartz substrate is smaller in comparison to that on the surface of the semiconductive and especially conductive Si substrate. The rutile phase still grows after the RF power is switched off. The rutile grain size increaseswhile hardness decreases in this case. Micro-Raman spectroscopy of residual indents in the films with anatase structure points out on the more dense high pressure TiO2-II structure formed during the indentation.
dcterms:title
Mechanical properties and structure of TiO2 films deposited on quartz and silicon substrates Mechanical properties and structure of TiO2 films deposited on quartz and silicon substrates
skos:prefLabel
Mechanical properties and structure of TiO2 films deposited on quartz and silicon substrates Mechanical properties and structure of TiO2 films deposited on quartz and silicon substrates
skos:notation
RIV/68378271:_____/13:00396224!RIV14-GA0-68378271
n14:predkladatel
n18:ico%3A68378271
n3:aktivita
n13:I n13:P
n3:aktivity
I, P(ED2.1.00/03.0058), P(EE2.3.20.0017), P(GAP108/12/1941), P(TA03010743)
n3:cisloPeriodika
Sept
n3:dodaniDat
n11:2014
n3:domaciTvurceVysledku
n4:6658776 n4:5585457 n4:5662281
n3:druhVysledku
n15:J
n3:duvernostUdaju
n9:S
n3:entitaPredkladatele
n19:predkladatel
n3:idSjednocenehoVysledku
86958
n3:idVysledku
RIV/68378271:_____/13:00396224
n3:jazykVysledku
n17:eng
n3:klicovaSlova
TiO2 films; ion bombardment; film structure; nanoindentation; phase transformation
n3:klicoveSlovo
n6:phase%20transformation n6:TiO2%20films n6:ion%20bombardment n6:film%20structure n6:nanoindentation
n3:kodStatuVydavatele
CH - Švýcarská konfederace
n3:kontrolniKodProRIV
[83977CC889BA]
n3:nazevZdroje
Thin Solid Films
n3:obor
n8:BH
n3:pocetDomacichTvurcuVysledku
3
n3:pocetTvurcuVysledku
6
n3:projekt
n10:GAP108%2F12%2F1941 n10:TA03010743 n10:EE2.3.20.0017 n10:ED2.1.00%2F03.0058
n3:rokUplatneniVysledku
n11:2013
n3:svazekPeriodika
542
n3:tvurceVysledku
Jastrabík, L. Boháč, Petr Vorlíček, Vladimír Kulykovskyy, Valeriy Čtvrtlík, R. Filip, J.
n3:wos
000323859400015
s:issn
0040-6090
s:numberOfPages
9
n16:doi
10.1016/j.tsf.2013.06.070