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Namespace Prefixes

PrefixIRI
dctermshttp://purl.org/dc/terms/
n19http://linked.opendata.cz/resource/domain/vavai/projekt/
n4http://linked.opendata.cz/resource/domain/vavai/riv/tvurce/
n13http://linked.opendata.cz/resource/domain/vavai/subjekt/
n6http://linked.opendata.cz/ontology/domain/vavai/
n18http://linked.opendata.cz/resource/domain/vavai/vysledek/RIV%2F68378271%3A_____%2F13%3A00395956%21RIV14-GA0-68378271/
shttp://schema.org/
skoshttp://www.w3.org/2004/02/skos/core#
n3http://linked.opendata.cz/ontology/domain/vavai/riv/
n14http://bibframe.org/vocab/
n2http://linked.opendata.cz/resource/domain/vavai/vysledek/
rdfhttp://www.w3.org/1999/02/22-rdf-syntax-ns#
n7http://linked.opendata.cz/ontology/domain/vavai/riv/klicoveSlovo/
n15http://linked.opendata.cz/ontology/domain/vavai/riv/duvernostUdaju/
xsdhhttp://www.w3.org/2001/XMLSchema#
n17http://linked.opendata.cz/ontology/domain/vavai/riv/aktivita/
n10http://linked.opendata.cz/ontology/domain/vavai/riv/jazykVysledku/
n16http://linked.opendata.cz/ontology/domain/vavai/riv/druhVysledku/
n11http://linked.opendata.cz/ontology/domain/vavai/riv/obor/
n12http://reference.data.gov.uk/id/gregorian-year/

Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F13%3A00395956%21RIV14-GA0-68378271
rdf:type
n6:Vysledek skos:Concept
dcterms:description
We report on the fabrication of an amorphous Si (a-Si) thin layer by means of bombardment of a Si(100) surface using monoenergetic C-60 cluster ions with energies from 50 keV to 400 keV. The C-60 cluster implantation produces nanogranules on the surface of a-Si layer detected by atomic force microscopy. The structural disorder and thickness of the modified layer were identified using Raman spectrometry, ion channelling, spectroscopic ellipsometry (SE) and transmission electron microscopy (TEM). According to SE and TEM data the thickness of a-Si layer gradually increases with cluster ion energy reaching to about 30 nm in the 200 keV C-60-bombarded Si sample. There is also thin layer of nanocrystalline Si found between the a-Si layer and pristine Si crystal. The obtained results represent an attractive method for creation of the a-Si layer as a functional material for opto- and nano-electronics. The study describes nanostructure created by cluster ion implantation as well as demonstrates the structural consequences of fast cluster energy dissipation in solids such as local heating and shock waves. We report on the fabrication of an amorphous Si (a-Si) thin layer by means of bombardment of a Si(100) surface using monoenergetic C-60 cluster ions with energies from 50 keV to 400 keV. The C-60 cluster implantation produces nanogranules on the surface of a-Si layer detected by atomic force microscopy. The structural disorder and thickness of the modified layer were identified using Raman spectrometry, ion channelling, spectroscopic ellipsometry (SE) and transmission electron microscopy (TEM). According to SE and TEM data the thickness of a-Si layer gradually increases with cluster ion energy reaching to about 30 nm in the 200 keV C-60-bombarded Si sample. There is also thin layer of nanocrystalline Si found between the a-Si layer and pristine Si crystal. The obtained results represent an attractive method for creation of the a-Si layer as a functional material for opto- and nano-electronics. The study describes nanostructure created by cluster ion implantation as well as demonstrates the structural consequences of fast cluster energy dissipation in solids such as local heating and shock waves.
dcterms:title
Controllable fabrication of amorphous Si layer by energetic cluster ion bombardment Controllable fabrication of amorphous Si layer by energetic cluster ion bombardment
skos:prefLabel
Controllable fabrication of amorphous Si layer by energetic cluster ion bombardment Controllable fabrication of amorphous Si layer by energetic cluster ion bombardment
skos:notation
RIV/68378271:_____/13:00395956!RIV14-GA0-68378271
n6:predkladatel
n13:ico%3A68378271
n3:aktivita
n17:I n17:P
n3:aktivity
I, P(GBP108/12/G108)
n3:cisloPeriodika
SI
n3:dodaniDat
n12:2014
n3:domaciTvurceVysledku
n4:5193222 n4:6208991 Dejneka, Alexandr n4:5662281 n4:6203272
n3:druhVysledku
n16:J
n3:duvernostUdaju
n15:S
n3:entitaPredkladatele
n18:predkladatel
n3:idSjednocenehoVysledku
66994
n3:idVysledku
RIV/68378271:_____/13:00395956
n3:jazykVysledku
n10:eng
n3:klicovaSlova
energetic clusters; silicon; surface modification; amorphization; nanostructure; Raman scattering; ion channeling
n3:klicoveSlovo
n7:surface%20modification n7:nanostructure n7:amorphization n7:ion%20channeling n7:silicon n7:Raman%20scattering n7:energetic%20clusters
n3:kodStatuVydavatele
GB - Spojené království Velké Británie a Severního Irska
n3:kontrolniKodProRIV
[DA7F5AEBD5FC]
n3:nazevZdroje
Vacuum
n3:obor
n11:BM
n3:pocetDomacichTvurcuVysledku
5
n3:pocetTvurcuVysledku
9
n3:projekt
n19:GBP108%2F12%2FG108
n3:rokUplatneniVysledku
n12:2013
n3:svazekPeriodika
98
n3:tvurceVysledku
Vacík, Jiří Jäger, Aleš Jastrabík, Lubomír Dejneka, Alexandr Narumi, K. Naramoto, H. Chvostová, Dagmar Lavrentiev, Vasyl Vorlíček, Vladimír
n3:wos
000322805900011
s:issn
0042-207X
s:numberOfPages
7
n14:doi
10.1016/j.vacuum.2013.05.017