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Namespace Prefixes

PrefixIRI
dctermshttp://purl.org/dc/terms/
n14http://linked.opendata.cz/resource/domain/vavai/vysledek/RIV%2F68378271%3A_____%2F13%3A00391737%21RIV14-AV0-68378271/
n18http://linked.opendata.cz/resource/domain/vavai/riv/tvurce/
n11http://linked.opendata.cz/resource/domain/vavai/projekt/
n12http://linked.opendata.cz/resource/domain/vavai/subjekt/
n10http://linked.opendata.cz/ontology/domain/vavai/
shttp://schema.org/
skoshttp://www.w3.org/2004/02/skos/core#
n3http://linked.opendata.cz/ontology/domain/vavai/riv/
n17http://bibframe.org/vocab/
n2http://linked.opendata.cz/resource/domain/vavai/vysledek/
rdfhttp://www.w3.org/1999/02/22-rdf-syntax-ns#
n6http://linked.opendata.cz/ontology/domain/vavai/riv/klicoveSlovo/
n15http://linked.opendata.cz/ontology/domain/vavai/riv/duvernostUdaju/
xsdhhttp://www.w3.org/2001/XMLSchema#
n19http://linked.opendata.cz/ontology/domain/vavai/riv/jazykVysledku/
n9http://linked.opendata.cz/ontology/domain/vavai/riv/aktivita/
n16http://linked.opendata.cz/ontology/domain/vavai/riv/obor/
n7http://linked.opendata.cz/ontology/domain/vavai/riv/druhVysledku/
n5http://reference.data.gov.uk/id/gregorian-year/

Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F13%3A00391737%21RIV14-AV0-68378271
rdf:type
n10:Vysledek skos:Concept
dcterms:description
Current–voltage characteristics of surface barrier diodes based on SI–GaAs are measured for different metal combinations used for top and bottom contacts. Up to two orders of magnitude current reduction is observed for the structures involving Mg metallization with respect to those without Mg. The strong blocking ability of the Mg contact is attributed to the downwards band-bending, formation of a quasi-degenerate interface region accumulating charge carriers, and the corresponding lowering of the bulk SI–GaAs free carrier concentration. Current–voltage characteristics of surface barrier diodes based on SI–GaAs are measured for different metal combinations used for top and bottom contacts. Up to two orders of magnitude current reduction is observed for the structures involving Mg metallization with respect to those without Mg. The strong blocking ability of the Mg contact is attributed to the downwards band-bending, formation of a quasi-degenerate interface region accumulating charge carriers, and the corresponding lowering of the bulk SI–GaAs free carrier concentration.
dcterms:title
Unexpected current lowering by a low work-funkction metal contact: Mg/SI-GaAs Unexpected current lowering by a low work-funkction metal contact: Mg/SI-GaAs
skos:prefLabel
Unexpected current lowering by a low work-funkction metal contact: Mg/SI-GaAs Unexpected current lowering by a low work-funkction metal contact: Mg/SI-GaAs
skos:notation
RIV/68378271:_____/13:00391737!RIV14-AV0-68378271
n10:predkladatel
n12:ico%3A68378271
n3:aktivita
n9:I n9:P
n3:aktivity
I, P(ED2.1.00/03.0058), P(EE2.3.30.0004)
n3:cisloPeriodika
APR
n3:dodaniDat
n5:2014
n3:domaciTvurceVysledku
n18:7422148 n18:8935688
n3:druhVysledku
n7:J
n3:duvernostUdaju
n15:S
n3:entitaPredkladatele
n14:predkladatel
n3:idSjednocenehoVysledku
112589
n3:idVysledku
RIV/68378271:_____/13:00391737
n3:jazykVysledku
n19:eng
n3:klicovaSlova
Schottky barrier; low-bias transport; semi-insulating GaAs; low work-function; high resistence; low leakage current; blocking contact
n3:klicoveSlovo
n6:blocking%20contact n6:low%20work-function n6:low-bias%20transport n6:high%20resistence n6:semi-insulating%20GaAs n6:Schottky%20barrier n6:low%20leakage%20current
n3:kodStatuVydavatele
GB - Spojené království Velké Británie a Severního Irska
n3:kontrolniKodProRIV
[03E82F424B5C]
n3:nazevZdroje
Solid-State Electronics
n3:obor
n16:BM
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
7
n3:projekt
n11:ED2.1.00%2F03.0058 n11:EE2.3.30.0004
n3:rokUplatneniVysledku
n5:2013
n3:svazekPeriodika
82
n3:tvurceVysledku
Kindl, Dobroslav Nečas, V. Baldini, M. Gombia, E. Dubecký, M. Dubecký, F. Hubík, Pavel
n3:wos
000317701500015
s:issn
0038-1101
s:numberOfPages
5
n17:doi
10.1016/j.sse.2013.01.021