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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F12%3A00395942%21RIV14-AV0-68378271
rdf:type
n3:Vysledek skos:Concept
dcterms:description
We present a detailed study of the below band-gap optical absorption at room temperature in bulk semi-insulating GaN:Fe versus the Fe-doping. It was established that the 1.24 eV photoluminescence band at 300 K consists of only vibrational replicas of the Fe3+ 4T1(G) 6A1(S) internal transition. We also studied the below band-gap photoluminescence excitation of the 1.24 eV band. The identical exponential rise of the photoluminescence excitation and the optical absorption coefficient identify the Fe3+/2+ charge-transfer as the main contributor to the 300 K optical absorption in the range 400-500 nm. Practical implications of these results for Fe-doping determination are discussed. We present a detailed study of the below band-gap optical absorption at room temperature in bulk semi-insulating GaN:Fe versus the Fe-doping. It was established that the 1.24 eV photoluminescence band at 300 K consists of only vibrational replicas of the Fe3+ 4T1(G) 6A1(S) internal transition. We also studied the below band-gap photoluminescence excitation of the 1.24 eV band. The identical exponential rise of the photoluminescence excitation and the optical absorption coefficient identify the Fe3+/2+ charge-transfer as the main contributor to the 300 K optical absorption in the range 400-500 nm. Practical implications of these results for Fe-doping determination are discussed.
dcterms:title
Below band-gap optical absorption and photoluminescence excitation spectroscopy at room temperature in low-defect-density bulk GaN:Fe Below band-gap optical absorption and photoluminescence excitation spectroscopy at room temperature in low-defect-density bulk GaN:Fe
skos:prefLabel
Below band-gap optical absorption and photoluminescence excitation spectroscopy at room temperature in low-defect-density bulk GaN:Fe Below band-gap optical absorption and photoluminescence excitation spectroscopy at room temperature in low-defect-density bulk GaN:Fe
skos:notation
RIV/68378271:_____/12:00395942!RIV14-AV0-68378271
n3:predkladatel
n15:ico%3A68378271
n4:aktivita
n7:I
n4:aktivity
I
n4:cisloPeriodika
3
n4:dodaniDat
n16:2014
n4:domaciTvurceVysledku
n8:7369123
n4:druhVysledku
n5:J
n4:duvernostUdaju
n17:S
n4:entitaPredkladatele
n18:predkladatel
n4:idSjednocenehoVysledku
124681
n4:idVysledku
RIV/68378271:_____/12:00395942
n4:jazykVysledku
n13:eng
n4:klicovaSlova
GaN; spectroscopy; optical absorption
n4:klicoveSlovo
n11:GaN n11:spectroscopy n11:optical%20absorption
n4:kodStatuVydavatele
US - Spojené státy americké
n4:kontrolniKodProRIV
[4EC47F49A33B]
n4:nazevZdroje
Applied Physics Letters
n4:obor
n10:BH
n4:pocetDomacichTvurcuVysledku
1
n4:pocetTvurcuVysledku
5
n4:rokUplatneniVysledku
n16:2012
n4:svazekPeriodika
100
n4:tvurceVysledku
Preble, E. Gladkov, Petr Paskova, T. Evans, K. R. Hulicius, Eduard
n4:wos
000299386800022
s:issn
0003-6951
s:numberOfPages
3
n14:doi
10.1063/1.3678195